Crystal symmetry breaking in few-quintuple Bi2Te3 films: Applications in nanometrology of topological insulators

Shahil, K. M. F.; Hossain, M. Z.; Teweldebrhan, D.; Balandin, A. A.
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p153103
Academic Journal
The authors report results of micro-Raman spectroscopy investigation of mechanically exfoliated single-crystal bismuth telluride films with thickness ranging from a few-nanometers to bulk limit. It is found that the optical phonon mode A1u, which is not-Raman active in bulk Bi2Te3 crystals, appears in the atomically-thin films due to crystal-symmetry breaking. The intensity ratios of the out-of-plane A1u and A1g modes to the in-plane Eg mode grow with decreasing film thickness. The evolution of Raman signatures with the film thickness can be used for identification of Bi2Te3 crystals with the thickness of few-quintuple layers important for topological insulator and thermoelectric applications.


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