In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers

Saenger, K. L.; Tsang, J. C.; Bol, A. A.; Chu, J. O.; Grill, A.; Lavoie, C.
April 2010
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p153105
Academic Journal
We examine graphitization of amorphous carbon (a-C) in a-C/Ni bilayer samples having the structure Si/SiO2/a-C(3–30 nm)/Ni(100 nm). In situ x-ray diffraction (XRD) measurements during heating in He at 3 °C/s to 1000 °C showed graphitic C formation beginning at temperatures T of 640–730 °C, suggesting graphitization by direct metal-induced crystallization, rather than by a dissolution/precipitation mechanism in which C is dissolved during heating and expelled from solution upon cooling. We also find that graphitic C, once formed, can be reversibly dissolved by heating to T>950 °C, and that nongraphitic C can be volatilized by annealing in H2-containing ambients.


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