TITLE

Origin of reverse annealing effect in hydrogen-implanted silicon

AUTHOR(S)
Di, Z. F.; Wang, Y. Q.; Nastasi, M.; Theodore, N. David
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p154103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. In this work, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induced platelets. Platelets are responsible for an increase in the height and width of the channeling damage peak following increased isochronal anneals.
ACCESSION #
49193282

 

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