TITLE

Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

AUTHOR(S)
Kellar, Joshua A.; Alaboson, Justice M. P.; Wang, Qing Hua; Hersam, Mark C.
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p143103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6[Square_Root]3×6[Square_Root]3)R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.
ACCESSION #
49071283

 

Related Articles

  • Initial growth stages of Si-Ge-Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy. Tuktamyshev, A.; Mashanov, V.; Timofeev, V.; Nikiforov, A.; Teys, S. // Semiconductors;Dec2015, Vol. 49 Issue 12, p1582 

    Temperature dependence of the critical thickness of the transition from two-dimensional to threedimensional growth of the GeSiSn films grown on Si (100) by molecular-beam epitaxy in the temperature range 150-450°C has been experimentally determined. This dependence is nonmonotonic and is...

  • Local transport measurements on epitaxial graphene. Baringhaus, J.; Edler, F.; Neumann, C.; Stampfer, C.; Forti, S.; Starke, U.; Tegenkamp, C. // Applied Physics Letters;9/9/2013, Vol. 103 Issue 11, p111604 

    Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip scanning tunneling and electron microscope (4-tip STM/SEM), the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport...

  • Incomplete screening by epitaxial graphene on the Si face of 6H–SiC(0001). Sandin, Andreas; Pronschinske, Alex; Rowe, J. E. (Jack); Dougherty, Daniel B. // Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p113104 

    A biased scanning tunneling microscope (STM) tip is used to study the ability of carriers in graphene to screen external electrostatic fields by monitoring the effect of tunneling-junction width on the position of image potential-derived surface states. These states are unusually sensitive to...

  • Epitaxial graphene on step bunching of a 6H-SiC(0001) substrate: Aromatic ring pattern and Van Hove singularities. Ridene, M.; Wassmann, T.; Pallecchi, E.; Rodary, G.; Girard, J. C.; Ouerghi, A. // Applied Physics Letters;3/18/2013, Vol. 102 Issue 11, p111610 

    We report on scanning tunneling microscopy and spectroscopy (STM/STS) investigations of graphene grown on a 6H-SiC(0001) substrate. Our STM images of a graphene layer on a step bunching of the SiC feature a ([Square_Root]3 × [Square_Root]3)R30° pattern of aromatic rings and well...

  • Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy. Springholz, G.; Ueta, A. Y.; Frank, N.; Bauer, G. // Applied Physics Letters;11/4/1996, Vol. 69 Issue 19, p2822 

    Molecular beam epitaxy of PbTe on BaF2 (111) is studied using UHV–scanning tunneling microscopy and atomic force microscopy. It is shown that PbTe growth is totally dominated by growth spirals formed around threading dislocations (TD) that originate from the growth on the 4.2%...

  • Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations. Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy // Scientific Reports;8/9/2013, p1 

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit...

  • Interferometric Techniques for Investigating Growth and Dissolution of Crystals in Solutions. Tsukamoto, Katsuo; Dold, Peter // AIP Conference Proceedings;2007, Vol. 916 Issue 1, p329 

    Although conventional optical interferometry has lower resolution for the observation of crystal surfaces than scanning probe microscopy (SPM) such as AFM or STM, new advanced interferometers have attained nearly the same resolution as scanning microscopes. The advantages of using optical...

  • Komparativna analiza različitih metoda za sintezu grafenskih nanotraka. ToŠić, Dragana D.; Marković, Zoran M.; Jovanović, Svetlana P.; Milosavljević, Momir S.; Todorović Marković, Biljana M. // Chemical Industry / Hemijska Industrija;2013, Vol. 67 Issue 1, p147 

    Graphene nanoribbons (GNRs) are thin strips of graphene that have captured the interest of scientists due to their unique structure and promising applications in electronics. This paper presents the results of a comparative analysis of morphological properties of graphene nanoribbons synthesized...

  • Graphene on Rh(111): Scanning tunneling and atomic force microscopies studies. Voloshina, E. N.; Dedkov, Yu. S.; Torbrügge, S.; Thissen, A.; Fonin, M. // Applied Physics Letters;6/11/2012, Vol. 100 Issue 24, p241606 

    The electronic and crystallographic structure of the graphene/Rh(111) moiré lattice is studied via combination of density-functional theory calculations and scanning tunneling and atomic force microscopy (STM and AFM). Whereas the principal contrast between hills and valleys observed in STM...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics