Charge transport in flat and nanorod structured ruthenium thin films

Steeves, M. M.; Deniz, D.; Lad, R. J.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142103
Academic Journal
Resistivities and Hall coefficients of flat and nanorod-structured Ru thin films were investigated from 295 to 600 K. Resistivities decreased upon first heating due to defect annealing, but Hall coefficients were found to be independent of temperature and defect content. The error in the Hall coefficient due to the Ettingshausen effect is shown to be negligible. Although resistivities and Hall coefficients of flat films are determined by a nominal film thickness, resistivities of nanorod-structured films are dominated by an ultrathin polycrystalline layer at the film-substrate interface and Hall coefficients appear to depend on an effective thickness determined by nanorod size and spacing.


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