Impact of defect distribution on transport properties for Au/ZnO Schottky contacts formed with H2O2-treated unintentionally doped n-type ZnO epilayers

Sejoon Lee; Youngmin Lee; Deuk Young Kim; Tae Won Kang
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142102
Academic Journal
The Au/ZnO Schottky contacts fabricated using H2O2-treated unintentionally doped ZnO epilayers showed an abnormal behavior in their transport properties; i.e., the background carrier density-dependent trade-off relation between the barrier height and the ideality factor was observed. This result is attributed to the difference in carrier transport mechanisms for each sample fabricated using ZnO epilayers with different background carrier concentrations; namely, the observed trade-off relation originates from a result that the difference in the distribution of oxygen vacancies near the surface and depletion regions, which depends on the initial background carrier concentration of each sample, causes the different carrier transport mechanism.


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