Laser-induced Zn doping in GaN based light-emitting diode

Zheng-Qun Xue; Sheng-Rong Huang; Bao-Ping Zhang; Chao Chen
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p141101
Academic Journal
By laser-induced Zn doping, hole concentration in the p-type GaN contact layer of conventional GaN-based light-emitting diodes (LEDs) is increased and improvement of the LED property is confirmed. Compared with LED with no use of laser-induced doping, the forward voltage under 20 mA current is decreased from 3.33 to 3.13 V and the thermal resistance of the chip is decreased from 18.6 to 9.7 K/W. In addition, the lifetime of the device is increased about 41%. These results are attributed to the improvement of the p-type Ohmic contact due to laser-induced doping of Zn to the p-GaN contact layer.


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