TITLE

Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications

AUTHOR(S)
Albo, Asaf; Cytermann, Catherine; Bahir, Gad; Fekete, Dan
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p141102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the composition and optical properties of GaInAsN/GaAs single quantum wells grown using metal organic chemical vapor epitaxy at 500 °C. Using time-of-flight secondary ion mass spectrometry and photoluminescence spectroscopy, we have shown the presence of a 1–2 nm thick nitrogen-rich interfacial layer at the first interface grown. The inhomogeneous asymmetric distribution of nitrogen atoms along the growth direction is attributed to the dominance of surface kinetics, nonlinear dependence of N incorporation on In content, and the strain gradient effect on the effective diffusion of N. We have utilized this finding to grow high quality quantum wells.
ACCESSION #
49071271

 

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