Characterization and modeling of a terahertz photoconductive switch

Suen, J. Y.; Li, W.; Taylor, Z. D.; Brown, E. R.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p141103
Academic Journal
We examine the terahertz (THz) performance of an ErAs:GaAs photoconductive switch under varying bias conditions and optical drive power. Despite THz power up to 287 μW, saturation effects were not seen. In addition, the THz power spectra were measured with a Fourier transform infrared spectrometer, and the roll-off was found to be invariant to bias voltage and consistent with a THz pulsewidth of 1.59 ps and a peak power of 3.1 W. These results are confirmed by a large-signal, high-frequency circuit model that suggests that further increase in THz power and efficiency are possible through an increase in the mode-locked laser power and reduction in its pulse width. The model is useful in designing both the laser and photoconductive switches to maximize available power and efficiency.


Related Articles

  • A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide. Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K. // Journal of Applied Physics;7/1/1992, Vol. 72 Issue 1, p82 

    Presents a study that demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide using cathodoluminescence, thermally stimulated current spectroscopy and low temperature Fourier transform infrared spectroscopy. Background on gettering; Cross-sectional...

  • Investigation on physico-chemical properties of semiorganic nonlinear optical L-lysine sulphate single crystal. Suja Rani, J.; Meena, M.; Mahadevan, C. K.; Antony Arockiaraj, M.; Rajasekar, S.; Vimalan, M.; Jaya Kumari, K. // Advances in Applied Science Research;2013, Vol. 4 Issue 2, p286 

    Single Crystals of L-lysine sulphate (abbreviated as LLS), a semiorganic nonlinear (NLO) materials have been successfully grown by slow solvent evaporation solution growth technique at room temperature. Solubility curve of LLS has been determined in mixed solvent of acetone and water. The grown...

  • Signature of the gallium-oxygen-gallium defect in GaAs by deep level transient spectroscopy... Neild, S.T.; Skowronski, M.; Lagowski, J. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p859 

    Presents experimental results of deep level transient spectroscopy (DLTS) and Fourier transform infrared spectroscopy on oxygen-doped gallium arsenide (GaAs) crystals. Positive identification of the DLTS signature of the gallium-oxygen-gallium defect; Energy level for the two-electron state of...

  • Evaluation of local vibrational mode absorption caused by carbon in GaAs. Saban, S. B.; Blakemore, J. S.; Nordquist, P. E. R.; Henry, R. L.; Gorman, R. J. // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2505 

    Presents information on a study that examined local vibrational mode absorption caused by carbon in gallium arsenide. Importance of optical methods in assessing crystalline semiconductors; Use of Fourier transform infrared; Role of carbon in the compensation of melt-grown undoped gallium arsenide.

  • Quality of silica capping layer and its influence on quantum-well intermixing. Fu, L.; Deenapanray, P. N. K.; Tan, H. H.; Jagadish, C.; Dao, L. V.; Gal, M. // Applied Physics Letters;2/14/2000, Vol. 76 Issue 7 

    The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40%):HNO[sub 3](70%):H[sub 2]O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on...

  • Infrared and transmission electron microscopy studies of ion-implanted H in GaN. Seager, C. H.; Myers, S. M. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2568 

    Presents information on a study which focused on the ion implantation of hydrogen and deuterium into undoped films of gallium arsenide using Fourier-transform infrared spectroscopy. Experimental details; Results and discussion; Conclusions.

  • Distribution coefficient of carbon in melt-grown GaAs. Desnica, U. V.; Cretella, M. C.; Pawlowicz, L. M.; Lagowski, J. // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3639 

    Reports on the results of a detailed investigation of the distribution coefficient of carbon in gallium arsenide (GaAs) for a series of crystals grown at different pulling rates by the liquid-encapsulated Czochralski method. Possible sources of the carbon and carbon dioxide which contaminate...

  • Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopy. Andersson, J. Y.; Landgren, G. // Journal of Applied Physics;10/15/1988, Vol. 64 Issue 8, p4123 

    Presents information on a study which analyzed infrared intersubband absorption in modulation-doped metalorganic vapor phase epitaxy (MOVPE)-grown Al[subx]Ga[sub1-x]As/gallium arsenide single-quantum wells (SQW), by Fourier transform infrared spectroscopy. Investigations of quantum-well...

  • Structure and Properties of BaO -B2O3 -Al2O3 --NaCl Glass System. Silim, H. A. // Egyptian Journal of Solids;2003, Vol. 26 Issue 1, p15 

    Barium aluminoborate glass of composition: xBaO-yAl2O2- (100-x-y) B2O2-2yNaCl, with y = 3 and x = 3, 8, 13, 18 and 23 mol % were prepared, its structure and properties were also investigated. The structure was examined using Fourier Transform Infrared (FTIR) spectroscopy. The D C electrical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics