TITLE

Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

AUTHOR(S)
Kandaswamy, P. K.; Machhadani, H.; Kotsar, Y.; Sakr, S.; Das, A.; Tchernycheva, M.; Rapenne, L.; Sarigiannidou, E.; Julien, F. H.; Monroy, E.
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p141903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the effect of Si doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices. For increasing doping levels, interband luminescence displays a blueshift and a broadening of the band edge caused by the screening of the internal electric field and band-filling effects. The intersubband absorption energy is mainly governed by many-body effects like exchange interaction and depolarization shift, which increase the e1–e2 subband separation. The ISB blueshift induced by many-body effects can be more than 50% of the e1–e2 transition energy.
ACCESSION #
49071265

 

Related Articles

  • Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices. Chernyak, Leonid; Osinsky, Andrei; Fuflyigin, Vladimir; Schubert, E. F. // Applied Physics Letters;8/7/2000, Vol. 77 Issue 6 

    The diffusion length, L, of electrons in Mg-doped p-GaN grown by metal-organic chemical vapor deposition was found to increase linearly from 0.55 to 2.0 μm during 1500 s of electron beam irradiation. Similar trends were observed for p-type Mg-doped GaN and AlGaN/GaN superlattices grown by...

  • Accumulation hole layer in p-GaN/AlGaN heterostructures. Shur, M. S.; Shur, M.S.; Bykhovski, A. D.; Bykhovski, A.D.; Gaska, R.; Yang, J. W.; Yang, J.W.; Simin, G.; Khan, M. A.; Khan, M.A. // Applied Physics Letters;5/22/2000, Vol. 76 Issue 21 

    We present the results on piezoelectric and pyroelectric doping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5x10[sup 13] cm[sup -2] holes at the AlGaN/GaN...

  • Photoexcited carrier dynamics in AlInN/GaN heterostructures. Liuolia, V.; Marcinkevicˇius, S.; Billingsley, D.; Shatalov, M.; Yang, J.; Gaska, R.; Shur, M. S. // Applied Physics Letters;6/11/2012, Vol. 100 Issue 24, p242104 

    Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructures have been examined by time-resolved and scanning near-field photoluminescence (PL) spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times...

  • Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location. Edmunds, C.; Tang, L.; Shao, J.; Li, D.; Cervantes, M.; Gardner, G.; Zakharov, D. N.; Manfra, M. J.; Malis, O. // Applied Physics Letters;9/3/2012, Vol. 101 Issue 10, p102104 

    We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δ-doping. The transition energies are in agreement with theoretical calculations including...

  • High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors. Hofstetter, Daniel; Baumann, Esther; Giorgetta, Fabrizio R.; Graf, Marcel; Maier, Manfred; Guillot, Fabien; Bellet-Amalric, Edith; Monroy, Eva // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p121112 

    We report on high-quality short-period superlattices in the AlN/GaN material system. Thanks to significant advances in the epitaxial growth, up to 40 superlattice periods with a total layer thickness of 120 nm could be grown without cracking problems. Given an intersubband transition energy on...

  • Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure. Sheu, J. K.; Lee, M. L.; Lai, W. C. // Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p043501 

    An Al0.21Ga0.79N/GaN p-i-n photodiode was designed with a heavily doped buried p+-GaN layer associating an n++-In0.3Ga0.7N layer to form a p+/n++ tunneling junction under the Al0.21Ga0.79p-i-n heterostructure. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices can...

  • Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states. Sun, Chi-Kuang; Liang, Jian-Chin; Yu, Xiang-Yang; Keller, Stacia; Mishra, Umesh K.; DenBaars, Steven P. // Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2724 

    Ultrafast carrier dynamics of bandtail states in an unintentionally doped gallium nitride sample was investigated using femtosecond transient transmission measurements. The transient responses of shallow bandtail states resemble those of above band gap extended states. The transient responses of...

  • Zeeman splitting of shallow donors in GaN. Mireles, Francisco; Ulloa, Sergio E. // Applied Physics Letters;1/11/1999, Vol. 74 Issue 2, p248 

    Studies the Zeeman splitting of the donor spectra in cubic and hexagonal GaN using an effective mass theory approach. Description of the chemical shift of the different substitutional dopants using soft-core pseudopotentials; Donor ground states calculated.

  • Co-implantation of Si+N into GaN for n-type doping. Nakano, Yoshitaka; Jimbo, Takashi // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p3815 

    Si-doping characteristics have been systematically investigated for Si+N co-implanted GaN. n-type regions were produced in undoped GaN films by the co-implantation and subsequent annealing with an SiO[sub 2] encapsulation layer at high temperatures. The sheet carrier concentration is seen to be...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics