Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

Kandaswamy, P. K.; Machhadani, H.; Kotsar, Y.; Sakr, S.; Das, A.; Tchernycheva, M.; Rapenne, L.; Sarigiannidou, E.; Julien, F. H.; Monroy, E.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p141903
Academic Journal
We report on the effect of Si doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices. For increasing doping levels, interband luminescence displays a blueshift and a broadening of the band edge caused by the screening of the internal electric field and band-filling effects. The intersubband absorption energy is mainly governed by many-body effects like exchange interaction and depolarization shift, which increase the e1–e2 subband separation. The ISB blueshift induced by many-body effects can be more than 50% of the e1–e2 transition energy.


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