Evidence of electrical activity of extended defects in 3C–SiC grown on Si

Song, X.; Michaud, J. F.; Cayrel, F.; Zielinski, M.; Portail, M.; Chassagne, T.; Collard, E.; Alquier, D.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142104
Academic Journal
In this paper, we demonstrate the high electrical activity of extended defects found in 3C–SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning transmission electron microscopy analysis was performed to reveal the defects while scanning spreading resistance microscopy aimed to study their electrical behavior. Using this technique, complete layer resistance cartography was done. The electrical activity of the extended defects in 3C–SiC was clearly evidenced. Furthermore, the defect activity was estimated to be higher than that of heavily nitrogen doped (5×1018 cm-3) 3C–SiC layer.


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