Epitaxial growth of Co2MnSi thin films at the vicinal surface of n-Ge(111) substrate

Nahid, M. A. I.; Oogane, M.; Naganuma, H.; Ando, Y.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142501
Academic Journal
The structure and magnetic properties of Co2MnSi films on n-Ge(111) substrate were investigated for the motivation of spin injection. The 50-nm-thick Co2MnSi films were fabricated on n-Ge(111) substrates by dc sputtering and postannealed about 1 h at the various temperatures ranging from 200–500 °C. In the annealing temperature range of 300–400 °C, the Co2MnSi were grown epitaxially at the vicinal surface of n-Ge(111) substrates. The epitaxial layer of Co2MnSi films was about 18 nm thick at 350 °C and exhibited ferromagnetic behavior. Interestingly, there was no diffusion of Ge inside the epitaxial layer and atomically flat interface was obtained.


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