TITLE

Ferromagnetic and antiferromagnetic properties of the semihydrogenated SiC sheet

AUTHOR(S)
Xu, B.; Yin, J.; Xia, Y. D.; Wan, X. G.; Liu, Z. G.
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p143111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The intriguing electronic and magnetic properties of the semihydrogenated SiC sheet are investigated by means of the first-principles calculations. The semihydrogenated SiC sheet exhibits diverse electronic and magnetic properties: a ferromagnetic semiconductor when Si atoms are hydrogenated, while an antiferromagnetic semiconductor with C atoms hydrogenated. The semihydrogenated SiC sheet with the C atoms hydrogenated is found to be more stable than the sheet with the Si atoms hydrogenated. Thus, controlling the hydrogenation on the different atom sites can precisely modulate the electronic and magnetic properties of the semihydrogenated SiC sheet, which endues the semihydrogenated SiC sheet great potential applications in the future functional nanodevices.
ACCESSION #
49071259

 

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