Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

Minseok Jo; Seonghyun Kim; Joonmyoung Lee; Seungjae Jung; Ju-Bong Park; Hyung-Suk Jung; Rino Choi; Hyunsang Hwang
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142110
Academic Journal
We used pulse bias temperature instability measurements to investigate the energy distributions of fast charge trapping sources to understand the origin of fast charge traps in an HfO2 device. The trap energy level was extracted using a trap-to-band tunneling model by changing the measurement delay time. The fast electron traps in an n-channel metal oxide semiconductor field effect transistors (MOSFET) exist in a 1 eV range below the bottom of the HfO2 conduction band. In the case of a p-channel MOSFET, the fast hole traps exist in the range 1–2 eV above the top of the HfO2 valence band, which could be attributed to a formation of negatively charged NO defects.


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