Electric field induced anisotropy modification in (Ga,Mn)As: A strategy for the precessional switching of the magnetization

Balestriere, P.; Devolder, T.; Wunderlich, J.; Chappert, C.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142504
Academic Journal
We propose a scheme for the precessional switching of the magnetization in the magnetic semiconductor (Ga,Mn)As using cubic anisotropy field reduction triggered by electric field and a small assisting magnetic field. We identify magnetic field regions for toggle switching and direct-overwrite of the magnetization and discuss the toggle switching critical curve dependence on the cubic anisotropy field decrease. We also determine the half-precession period of the magnetization and propose field conditions for magnetization trajectories which are optimally immune to external noise and damping.


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