Local electronic properties and magnetism of (Cd,Mn)Te quantum wells

Sangaletti, L.; Mozzati, M. C.; Drera, G.; Aguekian, V.; Floreano, L.; Morgante, A.; Goldoni, A.; Karczewski, G.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142105
Academic Journal
The electronic properties of heterostructures containing (Cd,Mn)Te quantum wells are probed by soft x-ray spectroscopies. We provide experimental evidence that Mn ions are in the Mn2+ (3d5) electronic configuration, and rule out the possibility that charge transfer and crystal field effects can reduce the magnetic moment of each Mn ion to the value (0.61) extracted from the fitting of the magnetization curve with a Brillouin function. These results confirm that the observed magnetic behavior can be correctly explained by assuming an antiferromagnetic coupling between nearest-neighbor S=5/2 Mn2+ ions, rather than a paramagnetic response from an ensemble of low-spin Mn ions.


Related Articles

  • Consequences of the silicon donor distribution tail in delta-doped, pseudomorphic.... Young, A.P.; Jianhui Chen // Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1546 

    Investigates the magnetotransport properties of asymmetric double quantum well heterostructures. Charge transport parameters prior to and following an optically induced ionization of the DX centers; Impact of the delta-doped layer embedded within a gallium arsenide well; Illumination in the...

  • Soft x-ray absorption of a buried SmCo film utilizing substrate fluorescence detection. Coulthard, I.; Freeland, J. W. // Applied Physics Letters;6/21/1999, Vol. 74 Issue 25, p3806 

    Discusses the monitoring of the K-shell x-ray fluorescence from the magnesium oxide substrate of a metallic heterostructure system containing a buried SmCo permanent magnet layer. Recording of transmission yield spectra for the SmCo film at both the Co-L[sub 3.2] and Sm-M[5.] absorption edges;...

  • Charge transfer in the Al–Mg alloy. Park, Chong-yun; Sagawa, Takasi // Journal of Applied Physics;8/15/1986, Vol. 60 Issue 4, p1310 

    Presents information on a study that measured the edge shift at the threshold in the ∠[sub2,3] soft x-ray emissions spectra of aluminum and magnesium in the γ-phase aluminum-magnesium alloy. Methodology of the study; Results and discussion on the study; Conclusion.

  • Measurement of the HCl+(A 2Σ+–X 2Π) electronic transition moment using quasiresonant charge transfer at low energy. Glenewinkel-Meyer, Th.; Müller, B.; Ottinger, Ch.; Tischer, H. // Journal of Chemical Physics;3/15/1988, Vol. 88 Issue 6, p3475 

    HCl+(A) was selectively prepared in the v’=0, 3, 5, and 6 levels using ion impact excitation. The resulting A–X spectra are largely free from band overlap. From intensity measurements on 16 bands, the electronic transition moment function M(R) was derived in the region of...

  • Epitaxial growth and electronic properties of well ordered phthalocyanine heterojunctions MnPc/F16 CoPc. Lindner, Susi; Mahns, Benjamin; Treske, Uwe; Vilkov, Oleg; Haidu, Francisc; Fronk, Michael; Zahn, Dietrich R. T.; Knupfer, Martin // Journal of Chemical Physics;9/1/2014, Vol. 141 Issue 9, p1 

    We have prepared phthalocyanine heterojunctions out of MnPc and F16CoPc, which were studied by means of X-ray absorption spectroscopy. This heterojunction is characterized by a charge transfer at the interface, resulting in charged MnPcδ + and F16CoPcδ - species. Our data reveal that the...

  • Time-resolved x-ray-excited optical luminescence characterization of one-dimensional Si–CdSe heterostructures. Rosenberg, R. A.; Shenoy, G. K.; Sun, X. H.; Sham, T. K. // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p243102 

    The authors have monitored the optical luminescence from one-dimensional Si–CdSe nanoheterostructures as a function of x-ray energy at the Se L3 edge (∼1430 eV). The wires consist of a diamond Si core encased in a wurtzite CdSe sheath. The time-resolved luminescence spectrum consists...

  • Interfacial structure and magnetic properties of Co2FeAl0.5Si0.5/MgO heterostructures. Hassan, Sameh S. A.; Xu, Yongbing; Hirohata, Atsufumi; Sukegawa, Hiroaki; Wang, Wenhong; Inomata, Koichiro; van der Laan, Gerrit // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103919-1 

    The interfacial properties of the Co2FeAl0.5Si0.5/MgO based magnetic tunnel junction have been investigated using x ray absorption spectroscopy (XAS), angle resolved x ray photoelectron spectroscopy (ARXPS), x ray magnetic circular dichroism (XMCD), and element-specific hysteresis loops. The XAS...

  • High magnetic field studies of charged exciton localization in GaAs/AlxGa1-xAs quantum wells. Jadczak, J.; Bryja, L.; Ryczko, K.; Kubisa, M.; Wójs, A.; Potemski, M.; Liu, F.; Yakovlev, D. R.; Bayer, M.; Nicoll, C. A.; Farrer, I.; Ritchie, D. A. // Applied Physics Letters;9/15/2014, Vol. 105 Issue 11, p1 

    We report on low temperature, polarization resolved, high magnetic field (up to 23 T) photoluminescence experiments on high mobility asymmetric GaAs quantum wells. At high magnetic fields, we detect two strong emission lines of the neutral and positively charged excitons (X and X+) and a...

  • Photoluminescence response of a quantum well to a change in the magnetic field of the Mn δ Layer in InGaAs/GaAs heterostructures. Dmitriev, A.; Talantsev, A.; Zaitsev, S.; Danilov, Yu.; Dorokhin, M.; Zvonkov, B.; Koplak, O.; Morgunov, R. // Journal of Experimental & Theoretical Physics;Jul2011, Vol. 113 Issue 1, p138 

    Ferromagnetic ordering of two types (depending on the sample geometry) is found to occur in a thin GaMnAs alloy layer (Mn δ layer) in heterostructures containing an InGaAs/GaAs quantum well. Singular samples in which the δ Mn layer is parallel to the (001) GaAs plane exhibit the '3/2'...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics