Perpendicularizing magnetic anisotropy of full-Heusler Co2FeAl films by cosputtering with terbium

Li, X. Q.; Xu, X. G.; Zhang, D. L.; Miao, J.; Zhan, Q.; Jalil, M. B. A.; Yu, G. H.; Jiang, Y.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142505
Academic Journal
In this letter, we fabricated Co2FeAl films with perpendicular-to-plane magnetic anisotropy by cosputtering with terbium (Tb). The as-prepared (Tb+Co2FeAl) films (TCFA) consists of nanocrystalline L21 Co2FeAl and amorphous alloy of Tb(Co, Fe, and Al). The coercivity field (Hc) of the TCFA films is adjustable from 200 to 800 Oe. After annealing, the Hc decreases to 70 Oe. A perpendicularly magnetized spin valve with the TCFA films as free and reference layers shows a current-perpendicular-to-plane magnetoresistance of 1.8% at room temperature. Our result opens a way to fabricate perpendicularly magnetized full-Heusler alloys and makes it possible to realize faster and simple structured magnetic storage bits in the future.


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