Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Jmerik, V. N.; Mizerov, A. M.; Sitnikova, A. A.; Kop'ev, P. S.; Ivanov, S. V.; Lutsenko, E. V.; Tarasuk, N. P.; Rzheutskii, N. V.; Yablonskii, G. P.
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p141112
Academic Journal
We report on AlGaN multiple-quantum-well separate confinement laser heterostructures grown by plasma-assisted molecular-beam epitaxy directly on c-sapphire at low temperatures (<800 °C). Threading dislocation density was reduced down to 109–1010 cm-2 owing to both intentionally introduced strained AlGaN/AlN superlattices and self-organized blocking structures in the AlGaN step-graded buffer layers. The quantum wells were fabricated by a submonolayer digital alloying technique. Calculations of the optical gain and confinement in the optically pumped laser structures yielded its optimum design comprising an asymmetric waveguide. Lasing at 303 nm with the relatively low threshold excitation density of 0.8 MW/cm2 at 295K has been achieved.


Related Articles

  • Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy. Sodabanlu, Hassanet; Yang, Jung-Seung; Tanemura, Takuo; Sugiyama, Masakazu; Shimogaki, Yukihiro; Nakano, Yoshiaki // Applied Physics Letters;10/10/2011, Vol. 99 Issue 15, p151102 

    Intersubband absorption saturation at 1.57 μm wavelength was observed in a 400-μm long Si3N4-rib AlN-based waveguide with GaN/AlN multiple quantum wells (MQWs) fabricated by metalorganic vapor phase epitaxy (MOVPE). The self-saturation measurement was employed using a 1.56-μm short...

  • Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum-well waveguides at telecommunication wavelength. Akimoto, R.; Li, B. S.; Akita, K.; Hasama, T. // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p181104 

    Ultrafast all-optical switching at an optical communication wavelength has been investigated by utilizing an intersubband transition (ISBT) of II–VI-based multiple quantum wells (MQWs) fabricated in high-mesa waveguide devices. The waveguide structure consists of a CdS/ZnSe/BeTe MQW core...

  • Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires. Schuster, R.; Hajak, H.; Reinwald, M.; Wegscheider, W.; Schuh, D.; Bichler, M.; Abstreiter, G. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3672 

    We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely from the tensile strain field of InAlAs layers...

  • Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy. Shih, Y. T.; Tsai, Y. L.; Yuan, C. T.; Chen, C. Y.; Yang, C. S.; Chou, W. C. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7267 

    This work investigates photoluminescence (PL) spectra from ZnSexTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching...

  • InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K. Damilano, B.; Grandjean, N.; Massies, J.; Siozade, L.; Leymarie, J. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    InGaN/GaN quantum wells (QWs) were grown by molecular-beam epitaxy on c-plane sapphire substrates. The growth of InGaN is carried out at 550 °C with a large V/III ratio to counteract the low efficiency of NH[sub 3] at that temperature and to promote the two-dimensional mode of growth. An In...

  • Ammonia-molecular-beam epitaxial growth and optical properties of GaN/AlGaN quantum wells. Tang, H.; Webb, J. B.; Sikora, P.; Raymond, S.; Bardwell, J. A. // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p9685 

    GaN/AlGaN quantum wells on GaN templates have been grown on (0001) sapphire substrates using the ammonia-molecular-beam epitaxy technique. The GaN template layers were of the type used previously for growing high-mobility, heterostructure field-effect transistor structures. The photoluminescence...

  • Low-temperature-grown GaAs quantum wells: Femtosecond nonlinear optical and parallel-field.... Knox, W.H.; Doran, G.E.; Asom, M.; Livescu, G.; Leibenguth, R.; Chu, S.N.G. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1491 

    Investigates the growth of gallium arsenide quantum wells grown at low temperature by molecular beam epitaxy. Exhibition of a broadened excitonic resonance; Analysis of the femtosecond time-resolved nonlinear optical saturation; Formation of arsenic metallic precipitates.

  • Photoluminescence characteristics of 1.5-µm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy. Sun, H.D.; Calvez, S.; Dawson, M.D.; Gilet, P.; Grenquillet, L.; Million, A. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 1, p9 

    We report the photoluminescence characteristics of moIecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-µm wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample...

  • High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers. Akasaka, Tetsuya; Gotoh, Hideki; Saito, Tadashi; Makimoto, Toshiki // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3089 

    InGaN multiple quantum wells were grown on InGaN underlying layers 50 nm thick by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements were performed by selective excitation of the quantum wells under a weak excitation condition. The PL intensity was almost constant at...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics