TITLE

Electronic properties of strained Si/Ge core-shell nanowires

AUTHOR(S)
Xihong Peng; Paul Logan
PUB. DATE
April 2010
SOURCE
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p143119
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the electronic properties of strained Si/Ge core-shell nanowires along the [110] direction using first principles calculations based on density-functional theory. The diameter of the studied core-shell wire is up to 5 nm. We found the band gap of the core-shell wire is smaller than that of both pure Si and Ge wires with the same diameter. This reduced band gap is ascribed to the intrinsic strain between Ge and Si layers, which partially counters the quantum confinement effect. The external strain is further applied to the nanowires for tuning the band structure and band gap. By applying sufficient tensile strain, we found the band gap of Si-core/Ge-shell nanowire with diameter larger than ∼3 nm experiences a transition from direct to indirect gap.
ACCESSION #
49071214

 

Related Articles

  • Metallic beta-phase silicon nanowires: Structure and electronic properties. Sorokin, P.; Avramov, P.; Demin, V.; Chernozatonskii, L. // JETP Letters;Nov2010, Vol. 92 Issue 5, p352 

    Electronic band structure and energetic stability of two types of 〈110〉 and 〈001〉 oriented silicon nanowires in β-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that β-Sn nanowires are metastable...

  • Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires. Chin, Hock-Chun; Gong, Xiao; Ng, Tien Khee; Loke, Wan Khai; Wong, Choun Pei; Shen, Zexiang; Wicaksono, Satrio; Yoon, Soon Fatt; Yeo, Yee-Chia // Journal of Applied Physics;Aug2010, Vol. 108 Issue 2, p024312 

    Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using...

  • Realization of dual-gated Ge–SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain. Junghyo Nah; Liu, E.-S.; Shahrjerdi, D.; Varahramyan, K. M.; Banerjee, S. K.; Tutuc, E. // Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG 

    We demonstrate dual-gated germanium (Ge)-silicon germanium (SixGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high-κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S...

  • Advanced core/multishell germanium/silicon nanowire heterostructures: Morphology and transport. Dayeh, S. A.; Gin, A. V.; Picraux, S. T. // Applied Physics Letters;4/18/2011, Vol. 98 Issue 16, p163112 

    A precise level of control over morphology and transport in germanium/silicon core/multishell semiconductor nanowires is attained by interface engineering. Epitaxial in situ growth of such advanced heterostructures is achieved, enabling smooth and crystalline shell quality without ex situ...

  • First-principles calculations of the dielectric properties of silicon nanostructures. Hamel, S.; Williamson, A. J.; Wilson, H. F.; Gygi, F.; Galli, G.; Ratner, E.; Wack, D. // Applied Physics Letters;1/28/2008, Vol. 92 Issue 4, p043115 

    We have investigated the static dielectric properties of silicon rods and slabs below 10 nm, in the long wavelength limit, by using first-principles density functional theory calculations. Surface structure is found to be the most important factor affecting the changes of the dielectric response...

  • Direct-to-indirect bandgap transitions in 〈110〉 silicon nanowires. Jensen, I. J. T.; Ulyashin, A. G.; Løvvik, O. M. // Journal of Applied Physics;2016, Vol. 119 Issue 1, p015702-1 

    The bandstructure of 〈110〉 silicon nano wires (SiNWs) with diameters (d) up to 6.1nm were studied using density functional theory. Three types of surface termination were investigated: H, F, and OH; all giving quantum confinement induced direct bandgaps in the investigated size...

  • Effect of composition on vacancy mediated diffusion in random binary alloys: First principles study of the Si[sub 1-x]Ge[sub x] system. Ramanarayanan, Panchapakesan; Cho, Kyeongjae; Clemens, Bruce M. // Journal of Applied Physics;7/1/2003, Vol. 94 Issue 1, p174 

    We present the results of a systematic study using the density functional theory (within the local density approximation) of the effect of composition on the self-diffusion of silicon and germanium in silicon-germanium alloys diffusing by a vacancy mechanism. The composition dependence of the...

  • Structural and electronic properties of Si1-xGex alloy nanowires. Iori, Federico; Ossicini, Stefano; Rurali, Riccardo // Journal of Applied Physics;2014, Vol. 116 Issue 15, p1 

    We present first-principles density-functional calculations of Si1-xGex alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a...

  • Structures and electronic properties of aluminum nanowires. Makita, Toshiki; Doi, Kentaro; Nakamura, Koichi; Tachibana, Akitomo // Journal of Chemical Physics;7/1/2003, Vol. 119 Issue 1, p538 

    We report first-principle electronic-state calculations for aluminum (Al) nanowires, which receive much attention as a new device material. First-principle calculations of the periodic boundary nanowire models have been carried out by means of supercell approximation techniques with density...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics