Dual functional modification by N doping of Ta2O5: p-type conduction in visible-light-activated N-doped Ta2O5

Morikawa, Takeshi; Saeki, Shu; Suzuki, Tomiko; Kajino, Tsutomu; Motohiro, Tomoyoshi
April 2010
Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142111
Academic Journal
We report dual functional modulation, both p-type conduction and band gap narrowing, of Ta2O5 semiconductor induced by heavy doping of nitrogen in films sputtered in N2/Ar mixture and ammonia-treated powders. The N doping induced a redshift in the optical absorption edge from 320 to 500 nm, resulting in the absorption of visible light. Simultaneously, the N doping caused a change in the conduction from n-type to p-type. As a result, the N–Ta2O5 photoelectrode containing 7.6 or 16.1 at. % of N exhibited a distinct cathodic photocurrent (due to p-type conduction) in solutions under visible light irradiation (>410 nm).


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