Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

Schubert, Martin F.; Schubert, E. Fred
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p131102
Academic Journal
The dwell time of electrons and holes above GaInN/GaN quantum wells is calculated using the k·p quantum transmitting boundary method. A long dwell time is an indication for high probability of carrier capture by the quantum well. Conversely, a reduced dwell time indicates that the carrier is likely to be coherently transported across the well. It is shown that sheet charges at GaInN/GaN heterointerfaces and a narrow quantum well lead to significant reductions in carrier dwell time. In addition, carrier capture is discussed in terms of a classical model that is consistent with dwell time calculations.


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