Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

Meng Zhang; Bhattacharya, Pallab; Wei Guo; Banerjee, Animesh
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p132103
Academic Journal
Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 °C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1×1018 cm-3. The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm2/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λpeak=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.


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