TITLE

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

AUTHOR(S)
Akazawa, M.; Matsuyama, T.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p132104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The valence-band offset of a lattice-matched In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy (MOVPE) was investigated by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy and angle-resolved XPS indicated that a thin In0.17Al0.83N (2.5 nm) layer was successfully grown by MOVPE on GaN. The XPS result showed that the valence band offset was 0.2±0.3 eV. This result indicates that the conduction-band offset at the In0.17Al0.83N/GaN interface is large, i.e., 0.9 to 1.0 eV, and occupies a large part of the entire band discontinuity.
ACCESSION #
48943885

 

Related Articles

  • Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. Akazawa, M.; Gao, B.; Hashizume, T.; Hiroki, M.; Yamahata, S.; Shigekawa, N. // Journal of Applied Physics;Jan2011, Vol. 109 Issue 1, p013703 

    The valence band offsets, ΔEV, of In0.17Al0.83N/GaN, In0.25Al0.75N/GaN, and In0.30Al0.70N/GaN heterostructures grown by metal-organic vapor phase epitaxy were evaluated by using x-ray photoelectron spectroscopy (XPS). The dependence of the energy position and the full width at half maximum...

  • Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium. Bi, Z. X.; Zhang, R.; Xie, Z. L.; Xiu, X. Q.; Ye, Y. D.; Liu, B.; Gu, S. L.; Shen, B.; Shi, Y.; Zheng, Y. D. // Journal of Materials Science;Aug2007, Vol. 42 Issue 15, p6377 

    The initial stages of the cubic indium nitride film growth at 350 °C were studied using low-pressure metal-organic chemical vapor deposition. The technique of the pre-deposition of indium was applied, that is, a layer of indium was first deposited on sapphire surface before the growth of InN....

  • A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP. Sun, Jie; Wallin, Daniel; He, Yuhui; Maximov, Ivan; Xu, H. Q. // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p012116 

    An integrated nanoelectronic circuit is fabricated from a high-mobility In0.75Ga0.25As/InP heterostructure. The manufactured device comprises two double in-plane gate transistors with a current channel of 1.1 μm in length and 100 nm in width. The two transistors are coupled to each other in a...

  • Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer. Çörekçi, S.; Öztürk, M. K.; Akaoğlu, B.; Çakmak, M.; Özçelik, S.; Özbay, E. // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p123502 

    AlxGa1-xN/GaN (x∼0.3) heterostructures with and without a high-temperature (HT) AlN interlayer (IL) have been grown on sapphire (Al2O3) substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer (BL) grown on an Al2O3 substrate...

  • Indium segregation in AlInN/AlN/GaN heterostructures. Minj, A.; Cavalcoli, D.; Cavallini, A. // Applied Physics Letters;9/27/2010, Vol. 97 Issue 13, p132114 

    AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation (and/or In-diffusion) and Al-rich surface reconstruction. The electrical...

  • Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy. Zhang, B. L.; Sun, G. S.; Guo, Y.; Zhang, P. F.; Zhang, R. Q.; Fan, H. B.; Liu, X. L.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G. // Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p242107 

    The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55±0.23 eV and the conduction band offset is deduced to be -2.01±0.23 eV, indicating that the heterojunction has a type-I band alignment....

  • Band alignment between GeTe and SiO2/metals for characterization of junctions in nonvolatile resistance change elements. Chua, E. K.; Shi, L. P.; Li, M. H.; Zhao, R.; Chong, T. C.; Schlesinger, T. E.; Bain, J. A. // Applied Physics Letters;6/6/2011, Vol. 98 Issue 23, p232104 

    GeTe materials were characterized using x-ray photoelectron spectroscopy in both the amorphous and crystalline states. Valence and conduction band alignments relative to a SiO2 reference were measured to allow the GeTe band diagram, work function, and electron affinity to be inferred. Hole...

  • Structural and spectral features of MOCVD AlGaInAsP/GaAs (100) alloys. Seredin, P.; Glotov, A.; Domashevskaya, E.; Lenshin, A.; Smirnov, M.; Arsentyev, I.; Vinokurov, D.; Stankevich, A.; Tarasov, I. // Semiconductors;Jun2012, Vol. 46 Issue 6, p719 

    The study is concerned with MOCVD epitaxial heterostructures grown on the basis of AlGaInAsP quinary alloys in the region of alloy compositions isoperiodic to GaAs. By the X-ray diffraction technique and atomic force microscopy, it is shown that, on the surface of the heterostructures, there are...

  • The influence of pressure on the growth of InAlN/AlN/GaN heterostructure. Bi, Y.; Wang, X.L.; Wang, C.M.; Li, J.P.; Liu, H.X.; Chen, H.; Xiao, H.L.; Feng, C.; Jiang, L.J. // European Physical Journal - Applied Physics;Mar2012, Vol. 57 Issue 3, pN.PAG 

    The influence of pressure on the MOCVD grown InAlN/AlN/GaN heterostructure has been investigated by high-resolution X-ray diffraction, Hall measurement and atomic force microscopy. High pressure is beneficial to increase indium incorporation efficiency. The electrical properties of InAlN/AlN/GaN...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics