TITLE

Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction

AUTHOR(S)
Jaehui Ahn; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R.; Jihyun Kim
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p132105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The difficulty associated with the precise positioning of nanowires has been one of the most significant issues hindering nanoelectronic integration. In this paper, we employed dielectrophoretic force to manipulate n-type GaN nano- and microwires onto a p-type GaN thin film to form a pristine p-n homojunction. The GaN wires were attracted to the n-type Ohmic metal in a direction parallel to the electric field, which was consistent with our simulation results. Violet electroluminescence emanated from the point of the n-GaN wire in contact with the p-GaN thin film. This p-n homojunction device displayed forward conduction above 6–9 V and current rectifying behavior down to a -20 V reverse bias. The current-voltage characteristics are distinctive of a p-n homojunction formed without deleterious damage or contamination.
ACCESSION #
48943884

 

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