Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks

Yoonyoung Chung; Murmann, Boris; Selvarasah, Selvapraba; Dokmeci, Mehmet R.; Zhenan Bao
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133306
Academic Journal
We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L=5, 10, and 20 μm. The field-effect mobility of the transistors was μ=1.14 (±0.08) cm2/V s on average, and the IMAX/IMIN ratio was greater than 106.


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