TITLE

Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure

AUTHOR(S)
Maiorano, V.; Bramanti, A.; Carallo, S.; Cingolani, R.; Gigli, G.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A bottom contact/top gate ambipolar “p-i-n” layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices.
ACCESSION #
48943877

 

Related Articles

  • Single-layer organic light-emitting diodes using naphthyl diamine. Tse, S. C.; Tsung, K. K.; So, S. K. // Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p213502 

    N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′diamine (NPB), a common hole transporter, was employed to fabricate single-layer organic light-emitting diodes (OLEDs). With a quasi-Ohmic anode, NPB device exhibited a bulk-limited hole current in the low-voltage...

  • Combination of a polyaniline anode and doped charge transport layers for high-efficiency organic light emitting diodes. Fehse, Karsten; Schwartz, Gregor; Walzer, Karsten; Leo, Karl // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p124509 

    Up to now, most organic light emitting diodes (OLEDs) have utilized inorganic materials as transport anodes. In this study, we show that conductive polymers are suitable for this purpose as well. Polyaniline anodes, with a conductivity of 200 S/cm, are used to inject holes into the adjacent...

  • One-polymer active pixel. Tzeng, K. L.; Meng, H. F; Tzeng, M. F; Chen, Y. S.; Liu, C. H.; Horng, S. F.; Yang, Y. Z.; Chang, S. M.; Hsu, C. S.; Chi, C. C. // Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p619 

    A metal-oxide field-effect transistor (MOSFET) based on an electroluminescent conjugated polymer is fabricated on a glass substrate. It is found that the mobility horizontal to the substrate is two to three orders of magnitude larger than the mobility vertical to the substrate. The high...

  • A light emitting transistor based on a hybrid metal oxide-organic semiconductor lateral heterostructure. Ooi, Zi-En; Foong, Thelese R. B.; Singh, Samarendra P.; Leok Chan, Khai; Dodabalapur, Ananth // Applied Physics Letters;2/27/2012, Vol. 100 Issue 9, p093302 

    A light-emitting field-effect transistor was fabricated, with its architecture based on a distinct heterojunction located midway between the source and drain contacts. Tetracene enabled hole transport on one side of the heterojunction (hole mobility ∼0.071 cm2/Vs), while amorphous...

  • Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer. Leem, Dong-Seok; Park, Hyung-Dol; Kang, Jae-Wook; Lee, Jae-Hyun; Kim, Ji Whan; Kim, Jang-Joo // Applied Physics Letters;7/2/2007, Vol. 91 Issue 1, p011113 

    The authors report a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N,N′-diphenyl-N,N′-bis (1,1′-biphenyl)-4,4′-diamine (NPB). The tris(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with ReO3-doped NPB HTL...

  • Three-dimensional organic field-effect transistors with high output current and high on-off ratio. Uno, Mayumi; Doi, I.; Takimiya, K.; Takeya, J. // Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG 

    High-performance three-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors. Advanced processes of vacuum depositing high-mobility and air-stable dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene thin films on a series of...

  • Controlling morphology: A vertical organic transistor with a self-structured permeable base using the bottom electrode as seed layer. Kaschura, Felix; Fischer, Axel; Kasemann, Daniel; Leo, Karl; Lüssem, Björn // Applied Physics Letters;7/22/2015, Vol. 107 Issue 3, p1 

    Flexible organic permeable base transistors are a promising transistor technology, enabling high transconductance without the need for cost-intensive structuring techniques. Here, we present a simple approach to enhance the transmission and thus the current gain of a permeable base transistor....

  • Switching regulator efficiently controls white-LED current. Grantham, Clayton B. // EDN;4/27/2006, Vol. 51 Issue 9, p98 

    The article focuses on the use of the LM2852 switched-mode bucking regulator in controlling the current flow through a white light-emitting diode (LED). One method of biasing an LED involves connecting a resistor in series with the LED to limit its maximum current. Using a series resistor allows...

  • Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror. Li, Y. Z.; Xu, W. J.; Ran, G. Z.; Qin, G. G. // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033307 

    We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics