Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Leach, J. H.; Zhu, C. Y.; Wu, M.; Ni, X.; Li, X.; Xie, J.; Özgür, Ü.; Morkoç, H.; Liberis, J.; Sˇermuksˇnis, E.; Matulionis, A.; Paskova, T.; Preble, E.; Evans, K. R.
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133505
Academic Journal
We report on electron velocities deduced from current gain cutoff frequency measurements on GaN heterostructure field effect transistors (HFETs) with InAlN barriers on Fe-doped semi-insulating bulk GaN substrates. The intrinsic transit time is a strong function of the applied gate bias, and a minimum intrinsic transit time occurs for gate biases corresponding to two-dimensional electron gas densities near 9.3×1012 cm-2. This value correlates with the independently observed density giving the minimum longitudinal optical phonon lifetime. We expect the velocity, which is inversely proportional to the intrinsic transit time, to be limited by scattering with non equilibrium (hot) phonons at the high fields present in the HFET channel, and thus, we interpret the minimum intrinsic transit time in terms of the hot phonon decay. At the gate bias associated with the minimum transit time, we determined the average electron velocity for a 1.1 μm gate length device to be 1.75±0.1×107 cm/sec.


Related Articles

  • Demonstration of undoped quaternary AlInGaN/GaN heterostructure field-effect transistor on sapphire substrate. Liu, Y.; Jiang, H.; Arulkumaran, S.; Egawa, T.; Zhang, B.; Ishikawa, H. // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p223510 

    Undoped AlInGaN/GaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mA/mm and extrinsic transconductance of 123 mS/mm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance...

  • Surface Barrier Height for Different Al Compositions and Barrier Layer Thicknesses in AlGaN/GaN Heterostructure Field Effect Transistors. Goyal, Nitin; Iniguez, Benjamin; Fjeldly, Tor A. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p393 

    In this paper, we present a physics based analytical model for the calculation of surface barrier height for given values of barrier layer thicknesses and Al mole fractions. An explicit expression for the two dimensional electron gas density is also developed incorporating the change in...

  • Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons. Leach, J. H.; Zhu, C. Y.; Wu, M.; Ni, X.; Li, X.; Xie, J.; Özgür, Ü.; Morkoç, H.; Liberis, J.; Sˇermuksˇnis, E.; Matulionis, A.; Cheng, H.; Kurdak, Ç. // Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p223504 

    We report on high electric field stress measurements at room temperature on InAlN/AlN/GaN heterostructure field effect transistor structures. The degradation rate as a function of the average electron density in the GaN channel (as determined by gated Hall bar measurements for the particular...

  • Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations. Ahmad, I.; Kasisomayajula, V.; Song, D. Y.; Tian, L.; Berg, J. M.; Holtz, M. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p113718 

    We report direct self-heating measurements for AlGaN/GaN heterostructure field effect transistor grown on SiC. Measurements are carried out using micro-Raman scattering excited by above band gap ultraviolet and below band gap visible laser light. Ultraviolet excitation probes the GaN near the...

  • Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy. Armstrong, A.; Chakraborty, A.; Speck, J. S.; DenBaars, S. P.; Mishra, U. K.; Ringel, S. A. // Applied Physics Letters;12/25/2006, Vol. 89 Issue 26, p262116 

    Deep levels were observed using capacitance deep level optical spectroscopy (DLOS) in an AlGaN/GaN heterostructure equivalent to that of a heterojunction field effect transistor. Band gap states were assigned to either the AlGaN or GaN regions by comparing the DLOS spectra in accumulation and...

  • Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering. Xiaozhi Zhang; Zhenxing Yue; Siqin Meng; Lixin Yuan // Journal of Applied Physics;12/28/2014, Vol. 116 Issue 24, p243909-1 

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane 1120 sapphire (Al2O3) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering...

  • Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures. Lisesivdin, S. B.; Balkan, N.; Makarovsky, O.; Patanè, A.; Yildiz, A.; Caliskan, M. D.; Kasap, M.; Ozcelik, S.; Ozbay, E. // Journal of Applied Physics;May2009, Vol. 105 Issue 9, p093701 

    This work describes Shubnikov–de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating...

  • Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Lv, Yuanjie; Lin, Zhaojun; Zhang, Yu; Meng, Lingguo; Luan, Chongbiao; Cao, Zhifang; Chen, Hong; Wang, Zhanguo // Applied Physics Letters;3/21/2011, Vol. 98 Issue 12, p123512 

    Using the measured capacitance-voltage curves of Ni Schottky contacts with different contact areas and the current-voltage characteristics for the circular and rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the polarization...

  • Tuning Into Plasmon-LO-phonon Resonance: Gateless Two-dimensional Channels for Nitride HEMTs. Sˇermuksˇnis, E.; Liberis, J.; Matulionis, A. // AIP Conference Proceedings;11/10/2010, Vol. 1288 Issue 1, p109 

    Hot-phonon lifetime in 2DEG channels of GaN-based HEMTs is measured at high supplied electric power. The non-monotonous dependence of lifetime on the supplied power is observed, the minimum value of about 30 fs is found. The dependence is explained by the concept of plasmon-LO-phonon resonance...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics