Model of tunneling transistors based on graphene on SiC

Michetti, Paolo; Cheli, Martina; Iannaccone, Giuseppe
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133508
Academic Journal
Recent experiments shown that graphene epitaxially grown on Silicon carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC tunnel field-effect transistors, and assess the dc and high frequency figures of merit. The steep subthreshold behavior can enable ION/IOFF ratios exceeding 104 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.


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