Characterizing a strain-driven phase transition in VO2

Kikuzuki, T.; Lippmaa, M.
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p132107
Academic Journal
A crystal bending stage was developed for measuring the transport properties of a VO2 thin film under low-frequency dynamic strain. A compressive stress of ∼20 MPa, applied along the VO2 c-axis at frequencies of up to 1 kHz, resulted in a 25% resistance change in the film. It was found that the activation energy of the strain-driven metal-insulator transition scales with the width of resistance hysteresis as 0.030 eV/K. The effect of normalized strain on resistance was nearly two times larger than the effect of normalized temperature at the transition point.


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