TITLE

Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

AUTHOR(S)
Ando, Takashi; Copel, Matt; Bruley, John; Frank, Martin M.; Watanabe, Heiji; Narayanan, Vijay
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p132904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate metal-gate-induced interfacial layer (IL) scaling using a HfO2 dielectric and clarify the kinetics underlying this process. The intrinsic IL scaling effect on electron mobility is separated from La and Al-induced dipole effects. We find that the mobility degradation for La-containing high-κ dielectrics is not due to the La-induced dipole but due to the intrinsic IL scaling effect, whereas the Al-induced dipole brings about additional mobility degradation. This unique nature of the La-induced dipole enables aggressive equivalent oxide thickness scaling down to 0.42 nm without extrinsic mobility degradation when combined with IL scaling.
ACCESSION #
48943854

 

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