Controllable graphene N-doping with ammonia plasma

Yung-Chang Lin; Chih-Yueh Lin; Po-Wen Chiu
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133110
Academic Journal
Here we show that gas-phase doping by means of NH3 plasma exposure is a highly flexible and manufacturable process for graphene electronics. The nitrogen-containing radicals can readily form covalent bonds with the carbon lattice and keep stable in the postannealing for damage restoration. The amount of charge transfer can be fine tuned by controlling the exposure time and monitored by the systematic shift in the Raman G mode and the Gds-Vg curves in transport measurements. The maximum doping level can reach 1.5×1013 cm-2.


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