TITLE

Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature

AUTHOR(S)
Zhe Wu; Suyoun Lee; Young-Wook Park; Hyung-Woo Ahn; Doo Seok Jeong; Jeung-hyun Jeong; Kwangsoo No; Byung-ki Cheong
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ge-doped SbTe (Ge–ST) was compared with Ge2Sb2Te5 (GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature (TA). Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge–ST devices were found to vary significantly less with TA than those of GST devices. From measured carrier density, mobility, and optical band gaps, these findings are interpreted to derive from a metallic nature of the crystalline Ge–ST in contrast with a semiconducting nature of the crystalline GST as well as a relatively weaker covalent bonding in amorphous Ge–ST.
ACCESSION #
48943845

 

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