Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen

Aichinger, Thomas; Nelhiebel, Michael; Decker, Stefan; Grasser, Tibor
March 2010
Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133511
Academic Journal
By applying an incremental sweep technique to silicon devices subjected to negative bias temperature stress, we identify two significant peaks of recoverable oxide defects located energetically within the silicon band gap. The first peak is near midgap and is almost fully developed after ten seconds of stress while the second peak is found in the upper half of the silicon band gap and develops gradually as a function of stress time. We obtain very similar density-of-state profiles for two samples having vastly different hydrogen concentrations within the gate oxide indicating that the precursor for oxide trap creation is independent of hydrogen.


Related Articles

  • Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices. Fleetwood, D. M.; Winokur, P. S.; Reber, R. A.; Meisenheimer, T. L.; Schwank, J. R.; Shaneyfelt, M. R.; Riewe, L. C. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5058 

    Describes a simple nomenclature for defects on metal-oxide-semiconductor (MOS) devices. Outline of the revised nomenclature; Discussion of three classes of physical models of border traps; Details of the long-term buildup and annealing of radiation-induced trapped charge in...

  • Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities. Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne // Journal of Applied Physics;2014, Vol. 116 Issue 12, p1 

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma...

  • Solving the thermal stability problem at the HfO2/Si interface with previous N implantation. Carazzolle, M. F.; Flüchter, C. R.; de Siervo, A.; Pancotti, A.; Weier, D.; Schürmann, M.; Westphal, C.; Landers, R.; Kleiman, G. G. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 5, p056101-1 

    We report on the use of N implantation to produce thin, pure, uniform, and thermally stable Si3N4 buffer layers and HfO2 overlayers on Si(100) and Si(111) without silicide formation.

  • Optical properties of amorphous high-k LaGdO3 films and its band alignment with Si. Pavunny, S. P.; Thomas, R.; Kumar, A.; Fachini, E.; Katiyar, R. S. // Journal of Applied Physics;Feb2012, Vol. 111 Issue 4, p044106 

    Optical properties of pulsed laser ablated amorphous high-k LaGdO3 (LGO) thin films on quartz (0001) substrates and its conduction/valance band offset with Si were studied. Complex refractive index and bandgap were extracted from the transmission spectra. An increase in the bandgap with...

  • Electron tunneling current in isotropic n+Poly-Si/HfSiOxN/Trap/SiO2/p-Si capacitors: Effect of the depth and width traps and Si orientation. Noor, Fatimah A.; Khairiah; Abdullah, Mikrajuddin; Khairurrijal // AIP Conference Proceedings;Sep2013, Vol. 1554 Issue 1, p154 

    In this work, we studied electron transmittance and tunneling current in isotropic n+Poly-Si/HfSiOxN/Trap/SiO2/p-Si capacitors by including the coupling effect between transverse and longitudinal kinetic energies represented by an electron velocity in the gate. It was used an HfSiOxN/SiO2 dual...

  • A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage. Qian, You; Lou, Liang; Julius Tsai, Minglin; Lee, Chengkuo // Applied Physics Letters;3/12/2012, Vol. 100 Issue 11, p113102 

    A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage is fabricated using standard complementary metal-oxide-semiconductor compatible process on silicon-on-insulator wafer. The switch consists of a capacitive paddle with dimension of 2 μm by 4 μm...

  • Study of the out-of-plane vibrational modes in thin-film amorphous silicon micromechanical disk resonators. Gualdino, A.; Chu, V.; Conde, J. P. // Journal of Applied Physics;May2013, Vol. 113 Issue 17, p174904 

    Thin-film silicon micro resonators are fabricated by surface micromachining at temperatures that are CMOS and large area substrate-compatible. Disk resonators offer large working surfaces and a large number of vibrational modes. The vibrational modes of micromechanical disk resonators made from...

  • An ultrafast silicon nanoplasmonic ballistic triode. Greig, S. R.; Elezzabi, A. Y. // Applied Physics Letters;12/15/2014, Vol. 105 Issue 24, p1 

    Ultrafast Optics and Nanophotonics Laboratory, Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4, Canada A nanoscale three terminal silicon based nanoplasmonic triode is proposed as a nanometer transistor. The device is suitable for monolithic...

  • Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics. Rao, Sandro; Pangallo, Giovanni; Della Cort, Francesco Giuseppe // Sensors (14248220);2016, Vol. 16 Issue 1, p1 

    Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics