In situ peeling of one-dimensional nanostructures using a dual-probe nanotweezer

Xie, Hui; Régnier, Stéphane
March 2010
Review of Scientific Instruments;Mar2010, Vol. 81 Issue 3, p035112
Academic Journal
We reported a method for in situ peeling force measurement of one-dimensional nanostructures using a dual-probe nanotweezer, which is developed on the principle of force microscopy. Benefiting from capabilities of image scanning and accurate force sensing, the nanotweezer is capable of positioning one-dimensional nanostructures deposited on a surface and then performing in situ peeling tests with pick-and-place operations at different peeling locations of interest along a selected nanostructure. In experiments, nanoscale peeling of silicon nanowires (SiNWs) on a silicon substrate has been studied. Peeling locations at the end and in the middle of the SiNW were tested and the results indicate that approximate peeling energies are needed.


Related Articles

  • A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires. Valentín, L. A.; Betancourt, J.; Fonseca, L. F.; Pettes, M. T.; Shi, L.; Soszynski, M.; Huczko, A. // Journal of Applied Physics;Nov2013, Vol. 114 Issue 18, p184301 

    The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements...

  • Design of two dimensional silicon nanowire arrays for antireflection and light trapping in silicon solar cells. Wuchang Ding; Rui Jia; Haofeng Li; Chen Chen; Yun Sun; Zhi Jin; Xinyu Liu // Journal of Applied Physics;2014, Vol. 115 Issue 1, p1 

    Silicon nitride coated nanowire arrays have been investigated as an efficient antireflection structure for silicon solar cells. The minimum average reflectance could reach 1.62% under AM1.5 spectrum. Scattering effects of silicon nanowire arrays also result in enhanced absorption in the...

  • Piezoresistance in silicon and its nanostructures. Rowe, A.C.H. // Journal of Materials Research;Mar2014, Vol. 29 Issue 6, p731 

    Piezoresistance (PZR) is the change in the electrical resistivity of a solid induced by an applied mechanical stress. Its origin in bulk crystalline materials like silicon is principally a change in the electronic structure which leads to a modification of the effective mass of charge carriers....

  • Microstructure and infrared spectral properties of porous polycrystalline and nanocrystalline cubic silicon carbide. Fan, J. Y.; Li, H. X.; Cui, W. N. // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021906 

    We investigated the structural and infrared spectral properties of porous polycrystalline 3C-SiC and 3C-SiC nanoparticles produced via electrochemical method. The porous sample consisted of parallel nanowires with periodic beadlike structures. It exhibited infrared spectral features quite...

  • Enhanced thermoelectric figure of merit in SiGe alloy nanowires by boundary and hole-phonon scattering. Martinez, Julio A.; Provencio, Paula P.; Picraux, S. T.; Sullivan, John P.; Swartzentruber, B. S. // Journal of Applied Physics;Oct2011, Vol. 110 Issue 7, p074317 

    We report the thermoelectric characteristics of individual p-type SiGe alloy nanowires for diameters of 100 to 300 nm and temperatures between 40 to 300 K. A technique that allows for electrical and thermal characterization on the same nanowire was developed in this work. Experimental data...

  • Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain. Ho, Ching-Yuan; Chang, Yaw-Jen; Chiou, Y. L. // Journal of Applied Physics;Aug2013, Vol. 114 Issue 5, p054503 

    The programming characteristics of gate-all-around silicon-oxide-nitride-oxide silicon (SONOS) nonvolatile memories are presented using NiSi/poly-Si nanowires (SiNW) Schottky barrier (SB) heterojunctions. The non-uniform thermal stress distribution on SiNW channels due to joule heating affected...

  • Nanomechanics: Full recovery takes time. Gianola, Daniel S.; Shin, Jungho // Nature Nanotechnology;Aug2015, Vol. 10 Issue 8, p659 

    The article looks at a research by researchers Yong Zhu and others published in journal "Nature Nanotechnology" which shows the remarkable behavior of nanoscale materials in irreversible, plastic deformations in the zinc oxide and silicon nanowires. Topics discussed include prevalent role of...

  • Structural evolution and graphitization of metallorganic-Pt suspended nanowires under high-current-density electrical test. Gazzadi, Gian Carlo; Frabboni, Stefano // Applied Physics Letters;4/27/2009, Vol. 94 Issue 17, p173112 

    We present a real-time investigation of the dramatic structural evolution occurring in metallorganic-Pt suspended nanowires (SNWs) (20 nm size) under high-current-density electrical test. SNWs are fabricated by electron beam-induced deposition and consist of Pt nanograins (2–3 nm)...

  • Interface coupling-induced enhancement of magnetoimpedance effect in heterogeneous nanobrush by adjusting textures of Co nanowires. Zhang, Yi; Dong, Juan; Sun, Xiaojun; Liu, Qingfang; Wang, Jianbo // Nanoscale Research Letters;Dec2013, Vol. 8 Issue 1, p1 

    Interface coupling-induced and interface coupling-enhanced magnetoimpedance (MI) effect in heterogeneous nanobrush has been investigated. The nanobrush is composed of Fe 25Ni 75 nanofilm and textured hexagonal close-packed cobalt nanowire array, respectively fabricated by RF magnetron sputtering...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics