TITLE

Tunneling of holes observed at work function measurements of metal/HfO2/SiO2/n-Si gate stacks

AUTHOR(S)
Rothschild, J. A.; Avraham, H.; Lipp, E.; Eizenberg, M.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p122102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The voltage bias that causes a transition from direct tunneling to Fowler–Nordheim tunneling in the current-voltage characteristic of a metal/HfO2/SiO2/n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO2 or to conduction of holes from the Si through the valence band of the HfO2. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.
ACCESSION #
48837275

 

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