Tunneling of holes observed at work function measurements of metal/HfO2/SiO2/n-Si gate stacks

Rothschild, J. A.; Avraham, H.; Lipp, E.; Eizenberg, M.
March 2010
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p122102
Academic Journal
The voltage bias that causes a transition from direct tunneling to Fowler–Nordheim tunneling in the current-voltage characteristic of a metal/HfO2/SiO2/n-Si capacitor was measured. The transition occurs in the negative gate voltage regime and can be attributed to conduction of electrons from the metal through a defect level in the HfO2 or to conduction of holes from the Si through the valence band of the HfO2. The dependence of the determined barrier height on the gate-metal work function indicates the validity of the latter model.


Related Articles

  • Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si/SiO2 interlayers. Koester, S. J.; Kiewra, E. W.; Sun, Yanning; Neumayer, D. A.; Ott, J. A.; Copel, M.; Sadana, D. K.; Webb, D. J.; Fompeyrine, J.; Locquet, J.-P.; Marchiori, C.; Sousa, M.; Germann, R. // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p042104 

    Evidence of inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si/SiO2 interlayers is reported. Capacitors formed on n-GaAs with atomic layer-deposited HfO2 displayed C-V characteristics with minimum Dit of 7×1011 cm-2/eV, while capacitors with...

  • Investigation of tunnel field-effect transistors as a capacitor-less memory cell. Biswas, Arnab; Dagtekin, Nilay; Grabinski, Wladyslaw; Bazigos, Antonios; Le Royer, Cyrille; Hartmann, Jean-Michel; Tabone, Claude; Vinet, Maud; Ionescu, Adrian M. // Applied Physics Letters;3/3/2014, Vol. 104 Issue 9, p1 

    In this work, we report experimental results on the use of tunnel field-effect transistors as capacitorless dynamic random access memory cells, implemented as double-gate fully depleted silicon-on-insulator devices. The devices have an asymmetric design, with a partial overlap of the top gate...

  • Characterization Techniques for Evaluating Strained Si CMOS Materials. Qianghua Xie; Ran Liu, Sharon; Xiang-Dong Wang; Canonico, Michael; Duda, Erika; Shifeng Lu; Candi Cook, Erika; Volinsky, Alex A.; Zollner, Stefan; Thomas, Shawn G.; White, Ted; Barr, Alex; Sadaka, Mariam; Bich-Yen Nguyen // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p223 

    The electron and hole mobility of Si complementary metal on oxide field effect transistors (CMOS) can be enhanced by introducing a biaxial tensile stress in the Si channel. This paper outlines several key analytical techniques needed to investigate such layers. Raman scattering is used to...

  • Effective capture rates of carriers in amorphous hydrogenated silicon. Kounavis, P.; Mataras, D.; Rapakoulias, D. // Journal of Applied Physics;8/15/1996, Vol. 80 Issue 4, p2305 

    Focuses a study which measured the effective capture rates of electrons and holes by the defects of undoped amorphous hydrogenated silicon. Background on the materials; Methods used; Results.

  • Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes. Pintilie, I.; Fretwurst, E.; Lindström, G. // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p024101 

    Cluster related defects were investigated by the thermally stimulated current (TSC) method in neutron irradiated n-type Si diodes during 80 °C annealing. Three hole traps labeled H (116 K), H (140 K), and H (152 K) proved to have an electric-field-enhanced emission characteristic of Coulombic...

  • Observation of domain boundaries on the Si (111) 7×7 surface by scanning tunneling microscope. Sumita, I.; Yokotsuka, T.; Tanaka, H.; Udagawa, M.; Watanabe, Y.; Takao, M.; Yokoyama, K. // Applied Physics Letters;9/24/1990, Vol. 57 Issue 13, p1313 

    A highly reliable scanning tunneling microscope system equipped with a field ion microscope yielded successful observation of a domain boundary on the Si(111) 7×7 reconstructed surface. For the first time, we revealed its detailed structure at the atomic level. The boundary consists of holes...

  • High hole mobility in Si/Si1-xGex/Si p-type modulation-doped double heterostructures. Wang, P. J.; Meyerson, B. S.; Fang, F. F.; Nocera, J.; Parker, B. // Applied Physics Letters;11/27/1989, Vol. 55 Issue 22, p2333 

    High quality Si/Si1-xGex/Si p-type modulation-doped double heterostructures with x=0.12 and 0.15 have been grown by the ultrahigh vacuum/chemical vapor deposition technique. Hole mobilities as high as ∼3700 cm2/V s at 14 K have been obtained for heterostructures with x=0.12, at a sheet...

  • Formation of self-aligned holes in an arbitrary pattern in silicon substrate. Hi-Deok Lee; Ho-Jun Lee // Applied Physics Letters;6/12/1995, Vol. 66 Issue 24, p3272 

    Proposes an etching method for the formation of self-aligned holes in an arbitrary pattern in silicon substrate. Use of anodic dissolution method; Application of current to silicon substrate in hydrogen fluoride, hydrogen nitrite and water solutions; Correlation of etching rate and time to the...

  • Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride. Shannon, J. M.; Morgan, B. A. // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1548 

    Presents information on a study which showed that the transport mechanism through the silicon dangling-bond states involves the movement of holes rather than silicon. Device fabrication; Results and interpretation; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics