TITLE

Hypersonic acoustic mirrors and microcavities in porous silicon

AUTHOR(S)
Aliev, G. N.; Goller, B.; Kovalev, D.; Snow, P. A.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p124101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Periodic solid state structures exhibit transmission stop bands for waves of certain frequencies. We report the realization and direct measurement of acoustic band gaps in porous silicon multilayer structures which exhibit ∼50 dB stop bands for longitudinal acoustic waves in the gigahertz range. Furthermore, realization of an acoustic microcavity structure in porous silicon is demonstrated.
ACCESSION #
48837266

 

Related Articles

  • Methods for Increasing the Efficiency of Nonlinear Optical Interactions in Nanostructured Semiconductors. Kashkarov, P. K.; Golovan, L. A.; Zabotnov, S. V.; Mel;nikov, V. A.; Krutkova, E. Yu.; Konorov, S. O.; Fedotov, A. B.; Bestem'yanov, K. P.; Gordienko, V. M.; Timoshenko, V. Yu.; Zheltikov, A. M.; Petrov, G. I.; Yakovlev, V. V. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p159 

    Methods for increasing the efficiency of the optical second- and third-harmonic generation in gallium phosphide and silicon nanostructures formed by electrochemical etching of crystalline semiconductors are discussed. The efficiency of nonlinear optical interactions can be increased by using...

  • The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon. Bulakh, B. M.; Korsunska, N.; Khomenkova, L. Yu.; Staraya, T. R.; Sheĭnkman, M. K. // Semiconductors;May2006, Vol. 40 Issue 5, p598 

    The photoluminescence spectra of porous silicon and their temperature dependences and transformations on aging are studied. It is shown that the infrared band prevailing in the spectra of as-prepared samples is due to exciton recombination in silicon crystallites. On aging, a well-pronounced...

  • Porous silicon layers form broadband mirrors. Marx, Bridget // Laser Focus World;Jul2004, Vol. 40 Issue 7, p30 

    Reports on the design, fabrication and test of laser mirrors made entirely from porous silicon. Refractive index; Electrochemical etching of alternating layers of high and low porosity; Way to produce mirrors with broad spectral bandwidth; Porosity ratio.

  • Porous silicon mirrors with enlarged omnidirectional band gap. Xifré-Pérez, E.; Marsal, L. F.; Pallarès, J.; Ferré-Borrull, J. // Journal of Applied Physics;3/15/2005, Vol. 97 Issue 6, p064503 

    Multilayers consisting of the periodic repetition of two layers with different refractive indices (nH and nL) may have an omnidirectional band gap, the width of which depends on the incidence medium and on the refractive index ratio nH/nL. In porous silicon, this ratio is limited by the material...

  • Metal-assisted chemical etching in HF/H[sub 2]O[sub 2] produces porous silicon. Li, X.; Bohn, P. W.; Bohn, P.W. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    A simple and effective method is presented for producing light-emitting porous silicon (PSi). A thin (d<10 nm) layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H[sub 2]O[sub 2]. Depending on the type of metal deposited and Si doping type...

  • Nondestructive Diagnostics of Microchannel (Macroporous) Silicon by X-ray Topography. Astrova, E. V.; Remenyuk, A. D.; Tkachenko, A. G.; Shul�pina, I. L. // Technical Physics Letters;Dec2000, Vol. 26 Issue 12, p1087 

    It is demonstrated that X-ray topography can be used for imaging the boundary between a microchannel silicon layer and a substrate, evaluating the quality of this interface, determining the channel depth, and revealing mechanical stresses. This technique can be used for nondestructive monitoring...

  • Spatial distribution of oxygen in luminescent porous silicon films. Teschke, Omar // Applied Physics Letters;4/11/1994, Vol. 64 Issue 15, p1986 

    Characterizes light-emitting porous silicon films produced by anodization. Use of transmission electron microscopy and electron energy loss spectroscopy imaging; Degree of oxygen distribution throughout the sample; Composition of the porous silicon films formed on lightly doped oriented silicon.

  • Porous silicon membranes. Searson, P.C. // Applied Physics Letters;8/12/1991, Vol. 59 Issue 7, p832 

    Analyzes the porous silicon membranes by electrochemical etching through wafers of up to 500 micrometer in thickness. Formation of porous silicon layers; Dependence of the pore diameter on dopant concentration for a given etching condition; Application of self-supporting porous silicon membranes.

  • A Mechanism of Oxygen-Induced Passivation of Porous Silicon in the HF : HCl : C[sub 2]H[sub 5]OH Solutions. Gavrilov, S. A.; Belogorokhov, A. I.; Belogorokhova, L. I. // Semiconductors;Jan2002, Vol. 36 Issue 1, p98 

    The problem of stabilizing the properties of porous silicon films was studied. A thermodynamical analysis of electrochemical processes occurring in the course of anodic Si dissolution is performed. A new description of electrode reaction of silicon interaction with hydrofluoric acid is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics