TITLE

Intrinsic limits of subthreshold slope in biased bilayer graphene transistor

AUTHOR(S)
Majumdar, Kausik; Murali, Kota V. R. M.; Bhat, Navakanta; Yu-Ming Lin
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p123504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent band gap results obtained from the solver against published experimental data. We show that the intrinsic bias dependence of the electronic structure and the self-consistent electrostatics limit the subthreshold slope obtained in such a transistor well above the Boltzmann limit of 60 mV/decade at room temperature, but much below the results experimentally shown till date, indicating room for technological improvement of bilayer graphene.
ACCESSION #
48837244

 

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