TITLE

Modulation of carrier density in ZnO nanowires without impurity doping

AUTHOR(S)
Kim, D. S.; Richters, J.-P.; Scholz, R.; Voss, T.; Zacharias, M.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p123110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZnO nanowire based field effect transistor devices show the distinct performance depending on whether comparably oxygen-rich or oxygen-poor conditions were used for nanowire growth. Higher on-state current flows through the ZnO nanowire channel grown under oxygen-poor condition. A possible origin of this characteristic is discussed based on a photoluminescence analysis of the nanowire samples. The observed effect should be taken into account for ZnO nanowire based devices and applications.
ACCESSION #
48837227

 

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