Modulation of carrier density in ZnO nanowires without impurity doping

Kim, D. S.; Richters, J.-P.; Scholz, R.; Voss, T.; Zacharias, M.
March 2010
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p123110
Academic Journal
ZnO nanowire based field effect transistor devices show the distinct performance depending on whether comparably oxygen-rich or oxygen-poor conditions were used for nanowire growth. Higher on-state current flows through the ZnO nanowire channel grown under oxygen-poor condition. A possible origin of this characteristic is discussed based on a photoluminescence analysis of the nanowire samples. The observed effect should be taken into account for ZnO nanowire based devices and applications.


Related Articles

  • Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties. Li, Y.; Meng, G. W.; Meng, G.W.; Zhang, L. D.; Zhang, L.D.; Phillipp, F. // Applied Physics Letters;4/10/2000, Vol. 76 Issue 15 

    Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to...

  • Photoluminescence and polarized photodetection of single ZnO nanowires. Fan, Zhiyong; Pai-chun Chang; Lu, Jia G.; Walter, Erich C.; Penner, Reginald M.; Chien-hung Lin; Lee, Henry P. // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6128 

    Single crystal ZnO nanowires are synthesized and configured as field-effect transistors. Photoluminescence and photoconductivity measurements show defect-related deep electronic states giving rise to green-red emission and absorption. Photocurrent temporal response shows that current decay time...

  • Growth of Large Quantity ZnO Nanowires and Their Optical Properties. Shunji Ozaki; Kouichi Morozumi // Key Engineering Materials;2014, Vol. 596, p121 

    Zinc oxide (ZnO) nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of ZnO and carbon powders at 1100 °C in a tube of the furnace. The obtained large-quantity cotton-like product has indicated to be the high density of ZnO nanowires with diameters...

  • Aligned growth of ZnO nanowires and lasing in single ZnO nanowire optical cavities. Guo, R. Q.; Nishimura, J.; Matsumoto, M.; Higashihata, M.; Nakamura, D.; Suehiro, J.; Okada, T. // Applied Physics B: Lasers & Optics;Mar2008, Vol. 90 Issue 3/4, p539 

    Ordered ZnO nanowire arrays have been fabricated in N2 background gas by catalyst-free nanoparticle-assisted pulsed-laser deposition. A single ZnO nanowire was collected in an electrode gap by dielectrophoresis. Under the optical pumping above an exciting laser (λ= 355 nm) threshold of ∼...

  • Role of defects in the anomalous photoconductivity in ZnO nanowires. Bera, A.; Basak, D. // Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p163119 

    The anomalous photocurrent decay in aqueous solution grown ZnO nanowires (NWs) under steady ultraviolet light illumination have been investigated. The photocurrent growth-decay measurements using the above-band and subband gap light excitation energies in the as-grown and annealed NWs show that...

  • Hierarchical ZnO nanostructures: Growth mechanisms and surface correlated photoluminescence. Grinblat, G.; Capeluto, M. G.; Tirado, M.; Bragas, A. V.; Comedi, D. // Applied Physics Letters;6/4/2012, Vol. 100 Issue 23, p233116 

    ZnO nanowires were grown by vapor-transport and deposition on Au nanocluster covered fused and thermal silica and c-Si. The nanowire size and density depended strongly on the substrate type. By decreasing the O2 to local Zn partial pressure ratio, the growth pattern changed to nanocombs and...

  • Photoluminescent and gas-sensing properties of ZnO nanowires prepared by an ionic liquid assisted vapor transfer approach. Subannajui, Kittitat; Wongchoosuk, Chatchawal; Ramgir, Niranjan; Wang, Chunyu; Yang, Yang; Hartel, Andreas; Cimalla, Volker; Zacharias, Margit // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p034311 

    In this work, the ionic liquid assisted technique was used to control the growth characteristic of ZnO nanowires (NWs). The major change after adding ionic liquid into the growth system was the change in NW growth orientation, which was shifted from polar c- to non-polar a-orientation. Room...

  • Photoluminescence Property Study on Patterned Growth of Aligned ZnO Nanowire Arrays. Haiyan Zhao; Ming Fu; Dawei He // Applied Mechanics & Materials;2014, Issue 556-562, p11 

    The patterned ZnO rods were fabricated by the photoresist pattern covered sputtered ZnO film assisted hydrothermal deposition.The ordered ZnO nanorods were prepared by the reaction in sodium citrate and Zinc nitrate solution. The sodium citrate and photoresist hole works together for...

  • High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature. Hung, S. C.; Chen, C. W.; Shieh, C. Y.; Chi, G. C.; Fan, R.; Pearton, S. J. // Applied Physics Letters;5/30/2011, Vol. 98 Issue 22, p223504 

    AlGaN/GaN high electron mobility transistors (HEMTs) with zinc oxide (ZnO) nanowires modified gate exhibit significant changes in channel conductance upon expose to different concentration of carbon monoxide (CO) at room temperature. The ZnO nanowires, grown by chemical vapor deposition (CVD)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics