Valence electron energy-loss spectroscopy of ultrathin SrTiO3 films grown on silicon (100) single crystal

Dong Su; Bo Yang; Nan Jiang; Sawicki, M.; Broadbridge, C.; Couillard, M.; Reiner, J. W.; Walker, F. J.; Ahn, C. H.; Yimei Zhu
March 2010
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p121914
Academic Journal
Valence electron energy-loss spectroscopy is used to investigate the plasmon excitations of ultrathin SrTiO3 sandwiched between amorphous Si and crystalline Si. Two plasmon excitations were observed, one at 15.8 eV and the other at 28.7 eV. Our calculations, based on dielectric-function theory, suggest that the former peak originates from the coupling of the Si layers and is related to the geometry of the structure, and the latter peak results from the SrTiO3 bulk plasmon after a redshift. Our findings demonstrate the value of valence electron energy-loss spectroscopy in detecting a local change in the effective electron mass.


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