Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer

Dong Yeol Yun; Jae Hun Jung; Dea Uk Lee; Tae Whan Kim; Ryu, E. D.; Kim, S. W.
March 2010
Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p123302
Academic Journal
Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) (PVK) layer to investigate the variations in the electrical properties due to a CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVK layer/p-Si devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/p-Si devices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence of the CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that the retention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger than that for devices fabricated utilizing CdTe nanoparticles.


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