Growth of highly oriented Pb(Zr, Ti)O[sub 3] films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Basit, Nasir Abdul; Kim, Hong Koo; Blachere, Jean
December 1998
Applied Physics Letters;12/28/1998, Vol. 73 Issue 26, p3941
Academic Journal
We have grown highly oriented lead zirconate titanate [Pb(Zr, Ti)O[sub 3] or PZT] films on oxidized silicon substrates using a thin MgO buffer layer (7–70 nm thick). Ferroelectric nonvolatile memory field-effect transistors (FETs) were successfully fabricated using the metal/PZT/MgO/SiO[sub 2]/Si structure in conjunction with radio-frequency sputter deposition of PZT and MgO films. The fabricated devices show excellent performance in ferroelectric polarization switching and memory retention. The results indicate that a thin MgO buffer serves well not only as a template layer for the growth of oriented PZT films on amorphous substrates, but also as a diffusion barrier between a ferroelectric and a substrate during device fabrication, protecting the SiO[sub 2]/Si interface and the FET channel region. © 1998 American Institute of Physics.


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