Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71, 3543 (1997)]

De Padova, P.; Perfetti, P.; Pizzoferrato, R.; Casalboni, M.
October 1998
Applied Physics Letters;10/19/1998, Vol. 73 Issue 16
Academic Journal
Presents comments on reports of germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy. Purpose for the commentary pointing the same reports from Higgs et al.; Difference of surface morphology reports; Basis of previous literature and present results ruling out Wang et al. proposals.


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