Vacancy ordering of Ga[sub 2]Se[sub 3] at GaSe/GaAs(100) interface

Dai, Z. R.; Ohuchi, F. S.
August 1998
Applied Physics Letters;8/17/1998, Vol. 73 Issue 7
Academic Journal
Vacancy ordering was directly observed by high resolution transmission electron microscopy (HRTEM) at the heterointerface of GaSe/GaAs(100) grown by molecular beam epitaxy. Ga[sub 2]Se[sub 3] crystalline film forms immediately to the GaAs (100) substrate, acting as an intermediate layer with thickness of 1.6–3.2 nm between the GaSe film and the GaAs substrate. Combining with fast Fourier transform analysis and simulations of HRTEM images and diffraction patterns, vacancy ordering in the Ga[sub 2]Se[sub 3] was investigated. The vacancies preferably distribute on the (100) crystal planes of α-Ga[sub 2]Se[sub 3] with a zinc-blende structure and the vacancy sheet appears on the planes of each three separated Ga sheets. © 1998 American Institute of Physics.


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