Carrier transport mechanism of Ohmic contact to p-type diamond

Yokoba, M.; Koide, Yasuo; Otsuki, A.; Ako, F.; Oku, T.; Murakami, Masanori
May 1997
Journal of Applied Physics;5/15/1997, Vol. 81 Issue 10, p6815
Academic Journal
The carrier transport mechanism through the p-diamond/metal interface was studied by measuring specific contact resistances (ρ[sub c]) using a transmission line method for Ti, Mo, and Cr (carbide forming metals) and Pd and Co (carbon soluble metals) metals contacting to the boron-doped polycrystalline diamond films. Schottky barrier heights (φ[sub B]) of around 0.5 eV were measured for the annealed contacts. The present result indicates that formation of thermally stable graphite layers at the diamond/metal interfaces upon annealing would pin the Fermi level of the p-diamond. This model led to the preparation of in situ Ohmic contacts by depositing a thin diamondlike carbon on the p-diamond surface prior to metal deposition, and also to excellent Schottky contacts with breakdown voltages higher than 900 V. The present experiment concluded that the existence of a graphite layer at the diamond/metal interface controlled the electrical properties through the p-diamond/metal interface. © 1997 American Institute of Physics.


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