Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

Terlinden, N. M.; Dingemans, G.; van de Sanden, M. C. M; Kessels, W. M. M.
March 2010
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p112101
Academic Journal
Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ∼5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical passivation through the measurement of the electric field in the c-Si space-charge region. It is demonstrated that this electric field—and hence the negative fixed charge density—is virtually unaffected by the Al2O3 thickness between 2 and 20 nm indicating that a decrease in chemical passivation causes the reduced passivation performance for <5 nm thick Al2O3 films.


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