TITLE

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

AUTHOR(S)
Terlinden, N. M.; Dingemans, G.; van de Sanden, M. C. M; Kessels, W. M. M.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p112101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ∼5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical passivation through the measurement of the electric field in the c-Si space-charge region. It is demonstrated that this electric field—and hence the negative fixed charge density—is virtually unaffected by the Al2O3 thickness between 2 and 20 nm indicating that a decrease in chemical passivation causes the reduced passivation performance for <5 nm thick Al2O3 films.
ACCESSION #
48698139

 

Related Articles

  • Tuning the mechanical behaviour of structural elements by electric fields. Di Lillo, Luigi; Raither, Wolfram; Bergamini, Andrea; Zündel, Manuel; Ermanni, Paolo // Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p224106 

    This work reports on the adoption of electric fields to tune the mechanical behaviour of structural elements. A mechanical characterization procedure, consisting of double lap joint and 3-point bending tests, is conducted on copper-polyimide laminates while applying electric fields of varying...

  • Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device. Rathod, S. S.; Saxena, A. K.; Dasgupta, S. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 8, p084504 

    In this paper, an analytical model for the estimation of threshold voltage shift, mobility, drain current and subthreshold leakage current in virgin as well as irradiated nanoscale fin-shaped field effect transistor (FinFET) device has been presented. The generation of traps in the buried oxide...

  • Convective particle transport arising from poloidal inhomogeneity in tokamak H mode. Kasuya, N.; Itoh, K. // Physics of Plasmas;Sep2005, Vol. 12 Issue 9, p090905 

    In tokamak high-confinement modes (H modes), a large poloidal flow exists within an edge transport barrier, and the electrostatic potential and density profiles can be steep both in the radial and poloidal directions. The two-dimensional structures of the electrostatic potential, density, and...

  • Development of radially movable multichannel Reynolds stress probe system for a cylindrical laboratory plasma. Nagashima, Yoshihiko; Inagaki, Shigeru; Kamakaki, Kunihiro; Arakawa, Hiroyuki; Yamada, Takuma; Shinohara, Shunjiro; Kawai, Yoshinobu; Yagi, Masatoshi; Fujisawa, Akihide; Itoh, Sanae -I.; Itoh, Kimitaka; Takase, Yuichi // Review of Scientific Instruments;Mar2011, Vol. 82 Issue 3, p033503 

    A new radially movable multichannel azimuthal probe system has been developed for measuring azimuthal and radial profiles of electrostatic Reynolds stress (RS) per mass density of microscale fluctuations for a cylindrical laboratory plasma. The system is composed of 16 probe units arranged...

  • A Neural Approach to Study the Transport Coefficients in the Crystalline Silicon. Arar, D.; Djeffal, F.; Bendib, T. // International Review of Physics;Oct2007, Vol. 1 Issue 4, p289 

    The study of the transport coefficients in electronic devices is currently carried out by analytical or numerical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the various electric characteristics of the...

  • A new code for collisional drift kinetic equation solving. Reynolds, J. M.; López-Bruna, D.; Guasp, J.; Velasco, J. L.; Tarancón, A. // AIP Conference Proceedings;11/2/2008, Vol. 1071 Issue 1, p72 

    We introduce a new code of plasma transport based on evolving the Boltzmann equation in guiding center approximation where collisions has been taken into account. The spatial geometry is discretized using high order elements in space and a moment expansion in velocity space. First calculations...

  • On the time evolution of the liquid meniscus at the end of a capillary placed in an external electric field. Grigor'ev, A. I.; Pozharitskii, D. M. // Technical Physics;Oct2008, Vol. 53 Issue 10, p1289 

    Using a linearized set of equations of electrodynamics, the stability of the uniformly charged meniscus of a viscous conducting incompressible liquid at the end of a capillary is investigated and analytical expressions are derived for the electric field outside the meniscus, velocity fields in...

  • Polariton dynamics of one-dimensional gyrotropic magnetic photonic crystal in an external dc electric field. Effective medium approach. Kulagin, D. V.; Savchenko, A. S.; Tarasenko, S. V. // Low Temperature Physics;Dec2008, Vol. 34 Issue 12, p1005 

    For the example of a semi-infinite thin-layer one-dimensional gyrotropic magnetic photonic crystal of the weak ferromagnet-nonmagnetic insulator type in an external electric field, we determine the conditions under which the quadratic magnetooptic interaction will lead to various anomalies in...

  • Flow of electrolytes in a porous medium. Shelukhin, V. V.; Amirat, Yu. // Journal of Applied Mechanics & Technical Physics;Jul2008, Vol. 49 Issue 4, p655 

    A two-scale model of ion transfer in a porous medium is obtained for one-dimensional horizontal flows under the action of a pressure gradient and an external electric field by the method of homogenization. Steady equations of electroosmotic flows in flat horizontal nano-sized slits separated by...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics