TITLE

Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

AUTHOR(S)
Sangwon Lee; Jun-Hyun Park; Kichan Jeon; Sungchul Kim; Yongwoo Jeon; Dae Hwan Kim; Dong Myong Kim; Jae Chul Park; Chang Jung Kim
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p113506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Due to the inherent property of large contact and parasitic resistances in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs), a metal-semiconductor-metal (MSM) structure is a key element in a-IGZO TFTs. Therefore, voltage drops across resistances and MSM structure should be fully considered in the modeling and characterization of a-IGZO TFTs. A physics-based semiempirical model for the current-voltage characteristics of the MSM structure for the source-channel-drain contact in a-IGZO TFTs is proposed and verified with experimental results. The proposed model for the current in a-IGZO MSM structures includes a thermionic field emission [JTFE∝exp(VR,Schottky/Vo)] and trap-assisted generation (Jgen∝VR,Schottky) in addition to the thermionic emission current (JS: Independent of the bias) under reverse bias. Experimental result suggests that electrical characteristics of the MSM structure depend not only on the Schottky barrier but also on the bulk property of the a-IGZO active layer.
ACCESSION #
48698130

 

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