Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Po-Tsun Liu; Chen-Shuo Huang; Yi-Ling Huang; Jing-Ru Lin; Szu-Lin Cheng; Yoshio Nishi; Sze, S. M.
March 2010
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p112902
Academic Journal
Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO2/germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO2/Ge interface at 150 °C. A smooth interfacial GeO2 layer between gate SiO2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.


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