Dielectric properties of colloidal Gd2O3 nanocrystal films fabricated via electrophoretic deposition

Mahajan, S. V.; Dickerson, J. H.
March 2010
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p113105
Academic Journal
We investigated the dielectric characteristics of [Al/Gd2O3/Si] metal-oxide-semiconductor (MOS) capacitors, which were fabricated from films of gadolinium oxide (Gd2O3) nanocrystals used as the gate oxide layer. Electrophoretic deposition cast Gd2O3 nanocrystal films of different thicknesses by varying the concentration of the nanocrystal suspensions. Capacitance-voltage (C-V) measurements of the MOS capacitors exhibited hysteresis, which indicated potentially favorable charge-storage properties. The films’ dielectric constant (κ=3.90), calculated from the C-V data, led to the packing density of nanocrystals within the film (66%), which is in the glassy regime approximated by randomly closed packed spheres.


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