Dielectric properties of colloidal Gd2O3 nanocrystal films fabricated via electrophoretic deposition

Mahajan, S. V.; Dickerson, J. H.
March 2010
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p113105
Academic Journal
We investigated the dielectric characteristics of [Al/Gd2O3/Si] metal-oxide-semiconductor (MOS) capacitors, which were fabricated from films of gadolinium oxide (Gd2O3) nanocrystals used as the gate oxide layer. Electrophoretic deposition cast Gd2O3 nanocrystal films of different thicknesses by varying the concentration of the nanocrystal suspensions. Capacitance-voltage (C-V) measurements of the MOS capacitors exhibited hysteresis, which indicated potentially favorable charge-storage properties. The films’ dielectric constant (κ=3.90), calculated from the C-V data, led to the packing density of nanocrystals within the film (66%), which is in the glassy regime approximated by randomly closed packed spheres.


Related Articles

  • Structural and dielectric properties of spin-on barium-strontium titanate thin films. Ivanov, D.; Caron, M.; Ouellet, L.; Blain, S.; Hendricks, N.; Currie, J. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2666 

    Presents the results of a study of Ba[sub0.5]Sr[sub0.5]TiO[sub3] (BST) thin film capacitors fabricated by a spin-on technique. Mechanisms that are possible in a dielectric material; Preparation of BST capacitor samples; Information on the BST thin film structure and morphology; Data on the...

  • Low-loss tunable capacitors fabricated directly on gold bottom electrodes. Jiwei Lu; Schmidt, Steffen; Boesch, Damien S.; Pervez, Nadia; York, Robert A.; Stemmer, Susanne // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p112905 

    At microwave frequencies, conductor losses due to the bottom electrode resistance severely limit the performance of metal-insulator-metal capacitors that employ tunable dielectric thin films. Here we demonstrate that a novel tunable dielectric, bismuth zinc niobate (BZN), can be integrated...

  • Effect of annealing on leakage current characteristics of Pt/Ba0.6Sr0.4TiO3/Pt thin-film capacitors. Fusheng Pan; Hongwei Chen; Wei Cai; Chuanren Yang // Journal of Materials Science: Materials in Electronics;Apr2007, Vol. 18 Issue 4, p453 

    Abstract?? The effect of annealing on leakage current characteristics of Pt/Ba0.6Sr0.4TiO3/Pt ferroelectric thin-film capacitors was investigated at the temperature range from 273?K to 393?K. The results show that the depletion layer width of the as-deposited BST film is about 3?5 times greater...

  • High-energy density in aromatic polyurea thin films. Yong Wang; Xin Zhou; Minren Lin; Zhang, Q. M. // Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p202905 

    This letter investigates dielectric responses of aromatic polyurea thin films fabricated through vapor deposition polymerization. The high quality polymer films exhibit high breakdown field (800 MV/m) and high-energy density (>12 J/cm3) at room temperature. These values decrease slightly from...

  • Thin-film capacitor M/Pb(ZrTi)O3/ M as a polarization-sensitive photocell. Delimova, L. A.; Yuferev, V. S.; Grekhov, I. V.; Petrov, A. A.; Fedorov, K. A.; Afanasjev, V. .P // Physics of the Solid State;Jun2009, Vol. 51 Issue 6, p1217 

    A steady-state short-circuit photocurrent of preliminarily polarized submicron capacitors with a polycrystalline Pb(ZrTi)O3 (PZT) film is investigated under irradiation by light with a wavelength λ > 0.4 μm. The structures with different M/PZT interfaces that differ in the leakage current...

  • Direct studies of domain switching dynamics in thin film ferroelectric capacitors. Gruverman, A.; Rodriguez, B. J.; Dehoff, C.; Waldrep, J. D.; Kingon, A. I.; Nemanich, R. J.; Cross, J. S. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p082902 

    An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force microscopy (PFM) in conjunction with pulse switching capabilities is presented. Instant domain configurations developing in a 3×3 μm2...

  • Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate. Lei Sun; Guoxuan Qin; Hai Huang; Han Zhou; Behdad, Nader; Weidong Zhou; Zhenqiang Ma // Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p013509 

    This letter reports the realization of bendable inductors and capacitors integrated on a polyethylene terephthalate substrate that can operate at high microwave frequencies. A low-temperature fabrication process compatible with flexible thin-film transistors (TFTs) was developed. By employing...

  • Ferroelectric and dielectric properties of SrBi4Ti4O15 thin films grown on Bi4Ti3O12 film layer. Do, D.; Kim, S.; Yi, S.; Kim, J. // Applied Physics A: Materials Science & Processing;Mar2009, Vol. 94 Issue 3, p697 

    Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi4Ti4O15 grown on Bi4Ti3O12, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO2/Si substrate by a chemical solution...

  • A method of determining the charge trapped at the interfaces of a metal/ferroelectric/metal thin-film structure. Delimova, L.; Grekhov, I.; Mashovets, D.; Shin, S.; Koo, J.; Kim, S.; Park, Y. // Physics of the Solid State;Jun2006, Vol. 48 Issue 6, p1182 

    A method is developed for determining the trap density at the metal/ferroelectric interfaces in a completely depleted ferroelectric film with two Schottky barriers. The method is based on the recharging of traps induced by an external pulsed bias. The ranges of the bias fields and of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics