Hot electron transport in magnetic tunnel transistors with an epitaxial MgO tunnel barrier

Nagahama, Taro; Saito, Hidekazu; Yuasa, Shinji
March 2010
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p112509
Academic Journal
We fabricated fully epitaxial magnetic tunnel transistors (MTTs) consisting of a Fe(001)/MgO(001) emitter and a Fe(001) based on a n-GaAs(001) collector. We observed much higher transfer ratio (α) and magnetocurrent (MC) ratio than those of the previously reported MTTs that had an amorphous AlO barrier. These improvements are due to the coherent tunneling and single-crystalline base layer. In addition, a pronounced peak structure appeared in the emitter bias dependence of α, which might be attributed to the interface resonance states at the Fe(001)/GaAs(001) interface.


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