TITLE

Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric

AUTHOR(S)
Wu, L.; Yu, H. Y.; Li, X.; Pey, K. L.; Pan, J. S.; Chai, J. W.; Chiu, Y. S.; Lin, C. T.; Xu, J. H.; Wann, H. J.; Yu, X. F.; Lee, D. Y.; Hsu, K. Y.; Tao, H. J.
PUB. DATE
March 2010
SOURCE
Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p113510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper, the thermal stability of TiN metal gate with various composition prepared by different preparation technology [(e.g., atomic layer deposition (ALD) or physical vapor deposition (PVD)] on HfO2 high-K dielectric is investigated and compared by physical and electrical analysis. After annealing of the TiN/HfO2 stack at 1000 °C for 30 s, it is observed that: (1) Nitrogen tends to out-diffuse from TiN for all the samples; (2) Oxygen from the interfacial layer (IL) between HfO2 and Si tends to diffuse toward TiN. PVD Ti-rich TiN shows a wider oxygen distribution in the gate stack, and a thinner IL than the N-rich sample. Ti penetration into HfO2 is also observed in the Ti-rich sample, which can potentially lead to the dielectric break-down. Besides, the oxygen out-diffusion can be significantly suppressed for ALD TiN compared to the PVD TiN samples.
ACCESSION #
48698084

 

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